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鍙冩暩(sh霉)璩囨枡
| 鍨嬭櫉锛� | IDT74FCT521ATSOG |
| 寤犲晢锛� | IDT, Integrated Device Technology Inc |
| 鏂囦欢闋佹暩(sh霉)锛� | 2/6闋� |
| 鏂囦欢澶�?銆�?/td> | 0K |
| 鎻忚堪锛� | IC COMPARATOR IDENTITY 8B 20SOIC |
| 妯欐簴鍖呰锛� | 37 |
| 绯诲垪锛� | 74FCT |
| 椤炲瀷锛� | 韬唤姣旇純鍣� |
| 浣嶆暩(sh霉)锛� | 8 |
| 杓稿嚭锛� | 浣庢湁鏁� |
| 杓稿嚭鍔熻兘锛� | A=B |
| 闆绘簮闆诲锛� | 4.75 V ~ 5.25 V |
| 杓稿嚭闆绘祦楂�锛屼綆锛� | 15mA锛�48mA |
| 椤嶅畾闆诲鍜屾渶澶� CL 鏅傜殑鏈€澶у偝鎾欢閬诧細 | 7.2ns @ 5V锛�50pF |
| 闆绘祦 - 闈滄厠(t脿i)锛� | 10µA |
| 宸ヤ綔婧害锛� | -40°C ~ 85°C |
| 灏佽/澶栨锛� | 20-SOIC锛�0.295"锛�7.50mm 瀵級 |
| 瀹夎椤炲瀷锛� | 琛ㄩ潰璨艰 |
| 鍖呰锛� | 绠′欢 |
| 鍏跺畠鍚嶇ū锛� | 74FCT521ATSOG IDT74FCT521ATSOG-ND |
INDUSTRIALTEMPERATURERANGE
2
IDT74FCT521AT/CT
FASTCMOS8-BITIDENTITYCOMPARATOR
PIN CONFIGURATION
Symbol
Description
Max
Unit
VTERM(2)
Terminal Voltage with Respect to GND
鈥�0.5 to +7
V
VTERM(3)
Terminal Voltage with Respect to GND
鈥�0.5 to VCC+0.5
V
TSTG
Storage Temperature
鈥�65 to +150
掳 C
IOUT
DC Output Current
鈥�60 to +120
mA
ABSOLUTE MAXIMUM RATINGS(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage may exceed
Vcc by +0.5V unless otherwise noted.
2. Inputs and Vcc terminals only.
3. Output and I/O terminals only.
Pin Names
Description
A0 - A7
Word A Inputs
B0 - B7
Word B Inputs
IA = B
Expansion or Enable Input (Active LOW)
OA = B
Identity Output (Active LOW)
PIN DESCRIPTION
Symbol
Parameter
(1)
Conditions
Typ.
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
10
pF
COUT
Output Capacitance
VOUT = 0V
8
12
pF
CAPACITANCE (TA = +25掳C, F = 1.0MHz)
NOTE:
1. This parameter is measured at characterization but not tested.
FUNCTION TABLE(1)
Inputs
Output
IA=B
A, B
OA = B
L
A = B*
L
LA
鈮犫墵鈮犫墵鈮� BH
H
A = B*
H
HA
鈮犫墵鈮犫墵鈮� BH
SOIC/ SSOP/ QSOP
TOP VIEW
2
3
1
16
15
14
11
19
18
20
17
13
12
5
6
7
4
8
9
10
A1
A0
B0
VCC
B1
A3
A2
B2
B3
GND
OA=B
B6
B7
A7
A6
B4
B5
A5
A4
IA=B
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
*
A0 = B0, A1 = B1, A2 = B2, etc.
鐩搁棞PDF璩囨枡 |
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鐩搁棞浠ｇ悊鍟�/鎶€琛撳弮鏁�(sh霉) |
鍙冩暩(sh霉)鎻忚堪 |
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| IDT74FCT521ATSOG8 | 鍔熻兘鎻忚堪:IC COMPARATOR IDENTITY 8B 20SOIC RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> 閭忚集 - 姣旇純鍣� 绯诲垪:74FCT 妯欐簴鍖呰:1 绯诲垪:4000B 椤炲瀷:骞呭€兼瘮杓冨櫒 浣嶆暩(sh霉):4 杓稿嚭:楂樻湁鏁� 杓稿嚭鍔熻兘:A<B锛孉=B锛孉>B 闆绘簮闆诲:3 V ~ 18 V 杓稿嚭闆绘祦楂�锛屼綆:4.2mA锛�4.2mA 椤嶅畾闆诲鍜屾渶澶� CL 鏅傜殑鏈€澶у偝鎾欢閬�:350ns @ 15V锛�50pF 闆绘祦 - 闈滄厠(t脿i):100µA 宸ヤ綔婧害:-55°C ~ 125°C 灏佽/澶栨:16-SOIC锛�0.209"锛�5.30mm 瀵級 瀹夎椤炲瀷:琛ㄩ潰璨艰 鍖呰:鍓垏甯� (CT) 鍏跺畠鍚嶇ū:296-14121-1 |
| IDT74FCT521BTQ | 鍒堕€犲晢:Rochester Electronics LLC 鍔熻兘鎻忚堪:- Bulk 鍒堕€犲晢:Integrated Device Technology Inc 鍔熻兘鎻忚堪: |
| IDT74FCT521CTPYG | 鍔熻兘鎻忚堪:IC COMPARATOR IDENTITY 8B 20SSOP RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> 閭忚集 - 姣旇純鍣� 绯诲垪:74FCT 妯欐簴鍖呰:1 绯诲垪:4000B 椤炲瀷:骞呭€兼瘮杓冨櫒 浣嶆暩(sh霉):4 杓稿嚭:楂樻湁鏁� 杓稿嚭鍔熻兘:A<B锛孉=B锛孉>B 闆绘簮闆诲:3 V ~ 18 V 杓稿嚭闆绘祦楂�锛屼綆:4.2mA锛�4.2mA 椤嶅畾闆诲鍜屾渶澶� CL 鏅傜殑鏈€澶у偝鎾欢閬�:350ns @ 15V锛�50pF 闆绘祦 - 闈滄厠(t脿i):100µA 宸ヤ綔婧害:-55°C ~ 125°C 灏佽/澶栨:16-SOIC锛�0.209"锛�5.30mm 瀵級 瀹夎椤炲瀷:琛ㄩ潰璨艰 鍖呰:鍓垏甯� (CT) 鍏跺畠鍚嶇ū:296-14121-1 |
| IDT74FCT521CTPYG8 | 鍔熻兘鎻忚堪:IC COMPARATOR IDENTITY 8B 20SSOP RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> 閭忚集 - 姣旇純鍣� 绯诲垪:74FCT 妯欐簴鍖呰:1 绯诲垪:4000B 椤炲瀷:骞呭€兼瘮杓冨櫒 浣嶆暩(sh霉):4 杓稿嚭:楂樻湁鏁� 杓稿嚭鍔熻兘:A<B锛孉=B锛孉>B 闆绘簮闆诲:3 V ~ 18 V 杓稿嚭闆绘祦楂�锛屼綆:4.2mA锛�4.2mA 椤嶅畾闆诲鍜屾渶澶� CL 鏅傜殑鏈€澶у偝鎾欢閬�:350ns @ 15V锛�50pF 闆绘祦 - 闈滄厠(t脿i):100µA 宸ヤ綔婧害:-55°C ~ 125°C 灏佽/澶栨:16-SOIC锛�0.209"锛�5.30mm 瀵級 瀹夎椤炲瀷:琛ㄩ潰璨艰 鍖呰:鍓垏甯� (CT) 鍏跺畠鍚嶇ū:296-14121-1 |
| IDT74FCT521CTQG | 鍔熻兘鎻忚堪:IC COMPARATOR IDENTITY 8B 20QSOP RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> 閭忚集 - 姣旇純鍣� 绯诲垪:74FCT 妯欐簴鍖呰:1 绯诲垪:4000B 椤炲瀷:骞呭€兼瘮杓冨櫒 浣嶆暩(sh霉):4 杓稿嚭:楂樻湁鏁� 杓稿嚭鍔熻兘:A<B锛孉=B锛孉>B 闆绘簮闆诲:3 V ~ 18 V 杓稿嚭闆绘祦楂橈紝浣�:4.2mA锛�4.2mA 椤嶅畾闆诲鍜屾渶澶� CL 鏅傜殑鏈€澶у偝鎾欢閬�:350ns @ 15V锛�50pF 闆绘祦 - 闈滄厠(t脿i):100µA 宸ヤ綔婧害:-55°C ~ 125°C 灏佽/澶栨:16-SOIC锛�0.209"锛�5.30mm 瀵級 瀹夎椤炲瀷:琛ㄩ潰璨艰 鍖呰:鍓垏甯� (CT) 鍏跺畠鍚嶇ū:296-14121-1 |
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