IDT72V36100/72V36110 3.3V HIGH DENSITY SUPERSYNC IITM <" />
參數(shù)資料
型號: IDT72V36100L6PFG
廠商: IDT, Integrated Device Technology Inc
文件頁數(shù): 22/48頁
文件大?。?/td> 0K
描述: IC FIFO 65536X36 SYNC 128TQFP
標(biāo)準(zhǔn)包裝: 36
系列: 72V
功能: 同步
存儲容量: 2.3K(64 x 36)
數(shù)據(jù)速率: 166MHz
訪問時(shí)間: 4ns
電源電壓: 3.15 V ~ 3.45 V
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 128-LQFP
供應(yīng)商設(shè)備封裝: 128-TQFP(14x20)
包裝: 托盤
29
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72V36100/72V36110 3.3V HIGH DENSITY SUPERSYNC IITM 36-BIT FIFO
65,536 x 36 and 131,072 x 36
OCTOBER 22, 2008
Figure
9.
Write
Timing
(First
Word
Fall
Through
Mode)
NOTES:
1.
tSKEW1
is
the
minimum
time
between
a
rising
WCLK
edge
and
a
rising
RCLK
edge
to
guarantee
that
OR
will
go
LOW
after
two
RCLK
cycles
plus
t
REF
.If
the
time
between
the
rising
edge
of
WCLK
and
the
rising
edge
of
RCLK
is
less
than
tSKEW1
,then
OR
assertion
may
be
delayed
one
extra
RCLK
cycle.
2.
tSKEW2
is
the
minimum
time
between
a
rising
WCLK
edge
and
a
rising
RCLK
edge
to
guarantee
that
PAE
will
go
HIGH
after
one
RCLK
cycle
plus
t
PAES
.If
the
time
between
the
rising
edge
of
WCLK
and
the
rising
edge
of
RCLK
is
less
than
tSKEW2
,then
the
PAE
deassertion
may
be
delayed
one
extra
RCLK
cycle.
3.
LD
=
HIGH,
OE
=
LOW
4.
n=
PAE
offset,
m
=
PAF
offset
and
D
=
maximum
FIFO
depth.
5.
D
=
65,537
for
the
IDT72V36100
and
131,073
for
the
IDT72V36110.
6
.
First
data
word
latency
=
t
SKEW1
+
2*T
RCLK
+
t
REF.
W
1
W
2
W
4
W
[n
+2]
W
[D-m-1]
W
[D-m-2]
W
[D
-1]
W
D
W
[n+3]
W
[n+4]
W
[D-m]
W
[D-m+1]
WCLK
WEN
D
0
-
D
17
RCLK
tDH
tDS
tSKEW1
(1)
REN
Q
0
-
Q
17
PAF
HF
PAE
IR
tDS
tSKEW2
tA
tREF
OR
tPAES
tHF
tPAFS
tWFF
W
[D-m+2]
W
1
tENH
6117
drw14
DATA
IN
OUTPUT
REGISTER
(2)
W
3
1
2
3
1
D-1
2
+1
]
[
W
D-1
+2
]
[
W
2
D-1
+3
]
[
W
2
1
2
tENS
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