IDT72V223/233/243/253/263/273/283/293 3.3V HIGH DENSITY SUPERSYNC II
參數(shù)資料
型號(hào): IDT72V263L6PF
廠(chǎng)商: IDT, Integrated Device Technology Inc
文件頁(yè)數(shù): 19/45頁(yè)
文件大?。?/td> 0K
描述: IC FIFO 8192X18 6NS 80QFP
標(biāo)準(zhǔn)包裝: 5
系列: 72V
功能: 異步,同步
存儲(chǔ)容量: 144K(8K x 18)
數(shù)據(jù)速率: 166MHz
訪(fǎng)問(wèn)時(shí)間: 4ns
電源電壓: 3.15 V ~ 3.45 V
工作溫度: 0°C ~ 70°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 80-LQFP
供應(yīng)商設(shè)備封裝: 80-TQFP(14x14)
包裝: 托盤(pán)
其它名稱(chēng): 72V263L6PF
26
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72V223/233/243/253/263/273/283/293 3.3V HIGH DENSITY SUPERSYNC IITM NARROW BUS FIFO
512 x 18, 1K x 9/18, 2K x 9/18, 4K x 9/18, 8K x 9/18, 16K x 9/18, 32K x 9/18, 64K x 9/18, 128K x 9
FEBRUARY 11, 2009
Figure 8. Read Cycle, Empty Flag and First Data Word Latency Timing (IDT Standard Mode)
NOTES:
1. tSKEW1 is the minimum time between a rising WCLK edge and a rising RCLK edge to guarantee that
EF will go HIGH (after one RCLK cycle plus tREF). If the time between the rising edge
of WCLK and the rising edge of RCLK is less than tSKEW1, then
EF deassertion may be delayed one extra RCLK cycle.
2.
LD = HIGH.
3. First data word latency: tSKEW1 + 1*TRCLK + tREF.
NOTES:
1. tSKEW1 is the minimum time between a rising RCLK edge and a rising WCLK edge to guarantee that
FF will go high (after one WCLK cycle pus tWFF). If the time between the rising edge
of the RCLK and the rising edge of the WCLK is less than tSKEW1, then the
FF deassertion may be delayed one extra WCLK cycle.
2.
LD = HIGH, EF = HIGH
Figure 7. Write Cycle and Full Flag Timing (IDT Standard Mode)
D0 - Dn
WEN
RCLK
REN
tENH
Q0 - Qn
DATA READ
NEXT DATA READ
DATA IN OUTPUT REGISTER
tSKEW1(1)
4666 drw10
WCLK
NO WRITE
1
2
1
2
tDS
NO WRITE
tWFF
tA
tENS
tDS
tA
DX
tDH
tCLK
tCLKL
DX+1
tDH
FF
tSKEW1(1)
tCLKH
tWFF
NO OPERATION
RCLK
REN
4666 drw11
EF
tCLK
tCLKH
tCLKL
tENH
tREF
tA
tOLZ
tOE
Q0 - Qn
OE
WCLK
tSKEW1(1)
WEN
D0 - Dn
tENS
tENH
tDS
tDHS
D0
1
2
tOLZ
NO OPERATION
LAST WORD
D0
D1
tENS
tENH
tDS
tDH
tOHZ
LAST WORD
tREF
tENH
tENS
tA
tREF
tENS
tENH
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