• 參數(shù)資料
      型號(hào): IDT7200L15SO8
      廠商: IDT, Integrated Device Technology Inc
      文件頁數(shù): 1/14頁
      文件大?。?/td> 0K
      描述: IC MEM FIFO 256X9 15NS 28-SOIC
      標(biāo)準(zhǔn)包裝: 1,000
      系列: 7200
      功能: 異步
      存儲(chǔ)容量: 2.3K(256 x 9)
      數(shù)據(jù)速率: 40MHz
      訪問時(shí)間: 15ns
      電源電壓: 4.5 V ~ 5.5 V
      工作溫度: 0°C ~ 70°C
      安裝類型: 表面貼裝
      封裝/外殼: 28-SOIC(0.345",8.77mm 寬)
      供應(yīng)商設(shè)備封裝: 28-SOIC
      包裝: 帶卷 (TR)
      其它名稱: 7200L15SO8
      1
      JUNE 2012
      CMOS ASYNCHRONOUS FIFO
      256 x 9, 512 x 9 and 1,024 x 9
      IDT7200L
      IDT7201LA
      IDT7202LA
      IDT and the IDT logo are registered trademarks of Integrated Device Technology, Inc.
      COMMERCIAL, INDUSTRIAL AND MILITARY TEMPERATURE RANGES
      2012 Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice.
      DSC-2679/13
      FEATURES:
      First-In/First-Out dual-port memory
      256 x 9 organization (IDT7200)
      512 x 9 organization (IDT7201)
      1,024 x 9 organization (IDT7202)
      Low power consumption
      — Active: 440mW (max.)
      —Power-down: 28mW (max.)
      Ultra high speed—12ns access time
      Asynchronous and simultaneous read and write
      Fully expandable by both word depth and/or bit width
      720x family is pin and functionally compatible from 256 x 9 to 64k x 9
      Status Flags: Empty, Half-Full, Full
      Auto-retransmit capability
      High-performance CEMOS technology
      Military product compliant to MIL-STD-883, Class B
      Standard Military Drawing #5962-87531, 5962-89666, 5962-89863
      and 5962-89536 are listed on this function
      Dual versions available in the TSSOP package. For more informa-
      tion, see IDT7280/7281/7282 data sheet
      IDT7280 = 2 x IDT7200
      IDT7281 = 2 x IDT7201
      IDT7282 = 2 x IDT7202
      DESCRIPTION:
      TheIDT7200/7201/7202aredual-portmemoriesthatloadandemptydata
      onafirst-in/first-outbasis. ThedevicesuseFullandEmptyflagstopreventdata
      overflowandunderflowandexpansionlogictoallowforunlimitedexpansion
      capability in both word size and depth.
      The reads and writes are internally sequential through the use of ring
      pointers,withnoaddressinformationrequiredtoloadandunloaddata. Data
      istoggledinandoutofthedevicesthroughtheuseoftheWrite(W)andRead
      (R) pins.
      Thedevicesutilizea9-bitwidedataarraytoallowforcontrolandparitybits
      attheuser’soption. Thisfeatureisespeciallyusefulindatacommunications
      applicationswhereitisnecessarytouseaparitybitfortransmission/reception
      errorchecking. ItalsofeaturesaRetransmit(RT)capabilitythatallowsforreset
      of the read pointer to its initial position when RT is pulsed LOW to allow for
      retransmissionfromthebeginningofdata. AHalf-FullFlagisavailableinthe
      single device mode and width expansion modes.
      These FIFOs are fabricated using high-speed CMOS technology. They
      aredesignedforthoseapplicationsrequiringasynchronousandsimultaneous
      read/writes in multiprocessing and rate buffer applications. Military grade
      productismanufacturedincompliancewithMIL-STD-883,ClassB.
      FUNCTIONAL BLOCK DIAGRAM
      W
      WRITE
      CONTROL
      READ
      CONTROL
      R
      FLAG
      LOGIC
      EXPANSION
      LOGIC
      XI
      WRITE
      POINTER
      RAM
      ARRAY
      256 x 9
      512 x 9
      1,024 x 9
      READ
      POINTER
      DATA INPUTS
      RESET
      LOGIC
      THREE-
      STATE
      BUFFERS
      DATA OUTPUTS
      EF
      FF
      XO/HF
      RS
      FL/RT
      (D0-D8)
      2679 drw 01
      (Q0-Q8)
      Industrial temperature range (–40oC to +85oC) is available
      (plastic packages only)
      Green parts available, see ordering information
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