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參數(shù)資料
| 型號(hào)： | IDT7187S55DB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | CMOS STATIC RAM 64K (64K x 1-BIT) |
| 中文描述： | 64K X 1 STANDARD SRAM, 55 ns, CDIP22 |
| 封裝： | 0.300 INCH, CERAMIC, DIP-22 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | IDT7187S55DB |
Integrated Device Technology, Inc.
MILITARY TEMPERATURE RANGE
AUGUST 1996
1996 Integrated Device Technology, Inc.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
2986/7
1
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
FEATURES:
High speed (equal access and cycle time)
— Military: 25/35/45/55/70/85ns (max.)
Low power consumption
Battery backup operation—2V data retention (L version
only)
JEDEC standard high-density 22-pin ceramic DIP, 22-pin
leadless chip carrier
Produced with advanced CMOS high-performance
technology
Separate data input and output
Input and output directly TTL-compatible
Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT7187 is a 65,536-bit high-speed static RAM
organized as 64K x 1. It is fabricated using IDT’s high-
performance, high-reliability CMOS technology. Access times
as fast as 25ns are available.
Both the standard (S) and low-power (L) versions of the
IDT7187 provide two standby modes—I
SB
and I
SB1
. I
SB
provides low-power operation; I
SB1
provides ultra-low-power
operation. The low-power (L) version also provides the capa-
bility for data retention using battery backup. When using a 2V
battery, the circuit typically consumes only 30
μ
W.
Ease of system design is achieved by the IDT7187 with full
asynchronous operation, along with matching access and
cycle times. The device is packaged in an industry standard
22-pin, 300 mil ceramic DIP, or 22-pin leadless chip carriers.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
ROW
SELECT
65,536-BIT
MEMORY ARRAY
COLUMN I/O
2986 drw 01
WE
CS
V
CC
GND
DATA
OUT
A
A
A
A
A
A
A
A
A
A
A
A
A
A
DATA
IN
6.2
CMOS STATIC RAM
64K (64K x 1-BIT)
IDT7187S
IDT7187L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT7187S55L22B | CMOS STATIC RAM 64K (64K x 1-BIT) |
| IDT7187S25DB | CMOS STATIC RAM 64K (64K x 1-BIT) |
| IDT7187S25L22B | CMOS STATIC RAM 64K (64K x 1-BIT) |
| IDT7187S35DB | CMOS STATIC RAM 64K (64K x 1-BIT) |
| IDT7187S35L22B | CMOS STATIC RAM 64K (64K x 1-BIT) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7187S85CB | 制造商:Integrated Device Technology Inc 功能描述:Static RAM, 64Kx1, 22 Pin, Ceramic, DIP |
| IDT7188 | 制造商:Integrated Device Technology Inc 功能描述: 制造商:IDTQ 功能描述: |
| IDT7188S25P | 制造商:Integrated Device Technology Inc 功能描述:Static RAM, 16Kx4, 22 Pin, Plastic, DIP |
| IDT7188S35P | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT7188S45C | 制造商:Integrated Device Technology Inc 功能描述:Static RAM, 16Kx4, 22 Pin, Ceramic, DIP |
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