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參數(shù)資料
| 型號： | IDT7015 |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM |
| 中文描述： | 高速8K的× 9雙端口靜態(tài)RAM |
| 文件頁數(shù)： | 9/20頁 |
| 文件大?。?/td> | 263K |
| 代理商： | IDT7015 |
IDT7015S/L
HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.12
9
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE
(5)
IDT7015X12 IDT7015X15 IDT7015X17
Com'l. Only Com'l. Only Com'l. Only
Min. Max. Min. Max. Min. Max.
Symbol
WRITE CYCLE
t
WC
t
EW
t
AW
t
AS
t
WP
t
WR
Parameter
Unit
Write Cycle Time
Chip Enable to End-of-Write
(3)
Address Valid to End-of-Write
Address Set-up Time
(3)
Write Pulse Width
Write Recovery Time
12 — 15 — 17 —
10 — 12 — 12 —
10 — 12 — 12 —
0 — 0 — 0
10 — 12 — 12 —
2 — 2 — 2 —
ns
ns
ns
ns
ns
ns
—
t
DW
Data Valid to End-of-Write
Output High-Z Time
(1, 2)
Data Hold Time
(4)
Write Enable to Output in High-Z
(1, 2)
Output Active from End-of-Write
(1, 2, 4)
SEM
Flag Write to Read Time
10 — 10 — 10 —
ns
t
HZ
t
DH
— 10 — 10 — 10
0 — 0 — 0
ns
ns
—
t
WZ
— 10 — 10 — 10
ns
t
OW
t
SWRD
3 — 3 — 0
5 — 5 — 5
—
—
ns
ns
t
SPS
SEM
Flag Contention Window
5 — 5 — 5
—
ns
IDT7015X20
IDT7015X25
IDT7015X35
Symbol
WRITE CYCLE
t
WC
t
EW
t
AW
t
AS
t
WP
t
WR
t
DW
t
HZ
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Write Cycle Time
Chip Enable to End-of-Write
(3)
Address Valid to End-of-Write
Address Set-up Time
(3)
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
(1, 2)
Data Hold Time
(4)
Write Enable to Output in High-Z
(1, 2)
Output Active from End-of-Write
(1, 2, 4)
20
15
15
0
15
2
15
—
—
—
—
—
—
—
—
12
25
20
20
0
20
2
15
—
—
—
—
—
—
—
—
15
35
30
30
0
25
2
15
—
—
—
—
—
—
—
—
20
ns
ns
ns
ns
ns
ns
ns
ns
t
DH
0
—
0
—
0
—
ns
t
WZ
t
OW
—
3
12
—
—
3
15
—
—
3
20
—
ns
ns
t
SWRD
SEM
Flag Write to Read Time
5
—
5
—
5
—
ns
t
SPS
SEM
Flag Contention Window
5
—
5
—
5
—
ns
NOTES:
1. Transition is measured
±
200mV from Low or High-impedance voltage with the Output test load (Figure 2).
2. This parameter is guaranteed by device characterization but not tested.
3. To access RAM,
CE
= V
IL
and
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
. Either condition must be valid for the entire t
EW
time.
4. The specification for t
DH
must be met by the device supplying write data to the RAM under all operating conditions. Although t
DH
and t
OW
values will vary
over voltage and temperature, the actual t
DH
will always be smaller than the actual t
OW
.
5. "X" in part numbers indicates power rating (S or L).
2954 tbl 12
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7015L | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM |
| IDT7015L12G | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM |
| IDT7015L12GB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM |
| IDT7015L12GI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM |
| IDT7015L12J | 功能描述:IC SRAM 72KBIT 12NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
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