參數(shù)資料
型號: IDT7009
廠商: Integrated Device Technology, Inc.
英文描述: HIGH-SPEED 128K x 8 DUAL-PORT STATIC RAM
中文描述: 高速128K的× 8雙端口靜態(tài)RAM
文件頁數(shù): 14/17頁
文件大?。?/td> 143K
代理商: IDT7009
14
IDT7009L
High-Speed 128K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges
BUSY
0
The IDT7009 provides two ports with separate control, address and
I/O pins that permt independent access for reads or writes to any location
in memory. The IDT7009 has an automatic power down feature controlled
by
CE
. The
CE
0
and CE
1
control the on-chip power down circuitry that
permts the respective port to go into a standby mode when not selected
(
CE
= V
IH
). When a port is enabled, access to the entire memory array
is permtted.
6
If the user chooses the interrupt function, a memory location (mail box
or message center) is assigned to each port. The left port interrupt flag
(
INT
L
) is asserted when the right port writes to memory location 1FFFE
(HEX), where a write is defined as
CE
R
= R/
W
R
= V
IL
per Truth Table
IV. The left port clears the interrupt through access of address location
1FFFE when
CE
L
=
OE
L
= V
IL
, R/
W
is a "don't care". Likewise, the right
port interrupt flag (
INT
R
) is asserted when the left port writes to memory
location 1FFFF (HEX) and to clear the interrupt flag (
INT
R
), the right port
must read the memory location 1FFFF. The message (8 bits) at 1FFFE
or 1FFFF is user-defined since it is an addressable SRAMlocation. If the
interrupt function is not used, address locations 1FFFE and 1FFFF are
not used as mail boxes, but as part of the randomaccess memory. Refer
to Table IV for the interrupt operation.
NOTES:
1. Pins
BUSY
L
and
BUSY
R
are both outputs when the part is configured as a master. Both are inputs when configured as a slave.
BUSY
outputs on the IDT7009 are
push-pull, not open drain outputs. On slaves the
BUSY
input internally inhibits writes.
2. "L" if the inputs to the opposite port were stable prior to the address and enable inputs of this port. "H" if the inputs to the opposite port became stable after the address
and enable inputs of this port. If t
APS
is not met, either
BUSY
L
or
BUSY
R
= LOW will result.
BUSY
L
and
BUSY
R
outputs can not be LOW simultaneously.
3. Writes to the left port are internally ignored when
BUSY
L
outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored
when
BUSY
R
outputs are driving LOW regardless of actual logic level on the pin.
4. Refer to Chip Enable Truth Table.
NOTES:
1. This table denotes a sequence of events for only one of the eight semaphores on the IDT7009.
2. There are eight semaphore flags written to via I/O
0
and read fromall I/O's (I/O
0
-I/O
7
). These eight semaphores are addressed by A
0
-A
2
.
3.
CE
= V
IH
,
SEM
= V
IL
to access the semaphores. Refer to the Semaphore Read/Write Control Truth Table.
$5$04E22
C#
$5$046E81353F
!!"#
Inputs
Outputs
Function
CE
L
CE
R
A
OL
-A
16L
A
OR
-A
16R
BUSY
L
(1)
BUSY
R
(1)
X
X
NO MATCH
H
H
Normal
H
X
MATCH
H
H
Normal
X
H
MATCH
H
H
Normal
L
L
MATCH
(2)
(2)
Write
Inhibit
(3)
4839 tbl 17
Functions
D
0
- D
7
Left
D
0
- D
7
Right
Status
No Action
1
1
Semaphore free
Left Port Writes "0" to Semaphore
0
1
Left port has semaphore token
Right Port Writes "0" to Semaphore
0
1
No change. Right side has no write access to semaphore
Left Port Writes "1" to Semaphore
1
0
Right port obtains semaphore token
Left Port Writes "0" to Semaphore
1
0
No change. Left port has no write access to semaphore
Right Port Writes "1" to Semaphore
0
1
Left port obtains semaphore token
Left Port Writes "1" to Semaphore
1
1
Semaphore free
Right Port Writes "0" to Semaphore
1
0
Right port has semaphore token
Right Port Writes "1" to Semaphore
1
1
Semaphore free
Left Port Writes "0" to Semaphore
0
1
Left port has semaphore token
Left Port Writes "1" to Semaphore
1
1
Semaphore free
4839 tbl 18
相關(guān)PDF資料
PDF描述
IDT70121L25JG HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
IDT70121L25JGI HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
IDT70121L35JG HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
IDT70121L35JGI HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
IDT70121L45JG HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7009L15PF 功能描述:IC SRAM 1MBIT 15NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT7009L15PF8 功能描述:IC SRAM 1MBIT 15NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT7009L15PFG 功能描述:IC SRAM 1MBIT 15NS 100TQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT7009L15PFG8 功能描述:IC SRAM 1MBIT 15NS 100TQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT7009L15PFI 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 128K x 8 DUAL-PORT STATIC RAM