參數(shù)資料
型號(hào): IDT7007L25GB
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM
中文描述: 32K X 8 DUAL-PORT SRAM, 25 ns, CPGA68
封裝: 1.800 X 1.800 INCH, 0.160 INCH HEIGHT, PGA-68
文件頁(yè)數(shù): 5/21頁(yè)
文件大小: 257K
代理商: IDT7007L25GB
5
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
Truth Table I: Non-Contention Read/Write Control
Truth Table II: Semaphore Read/Write Control
(1)
Absolute Maximum Ratings
(1)
Symbol
Rating
Recommended Operating
Conditions
Symbol
Parameter
Maximum Operating Temperature
and Supply Voltage
(1,2)
Capacitance
(T
A
= +25°C, f = 1.0mhz)
Parameter
(1)
NOTE:
1. A
0L
A
14L
A
0R
A
14R
NOTE:
1. There are eight semaphore flags written to via I/O
0
and read from all I/O's. These eight semaphores are addressed by A
0
- A
2
.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sec-tions of this specification is not implied. Exposure
to absolute maxi-mum rating conditions for extended periods may affect
reliability.
2. V
TERM
must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V
TERM
> Vcc + 10%.
NOTES:
1. This is the parameter T
A
.
2. Industrial temperature: for other speeds, packages and powers contact your
sales office.
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 10%.
NOTES:
1. This parameter is determined by device characterization but is not production
tested. TQFP package only.
2. 3dV represents the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
Inputs
(1)
Outputs
Mode
CE
R/
W
OE
SEM
I/O
0-7
H
X
X
H
High-Z
Deselected: Power-Down
L
L
X
H
DATA
IN
Write to Memory
L
H
L
H
DATA
OUT
Read Memory
X
X
H
X
High-Z
Outputs Disabled
2940 tbl 02
Inputs
Outputs
Mode
CE
R/
W
OE
SEM
I/O
0-7
H
H
L
L
DATA
OUT
Read Semaphore Flag Data Out (I/O
0
-I/O
7
)
H
X
L
DATA
IN
Write I/O
0
into Semaphore Flag
L
X
X
L
______
Not Allowed
2940 tbl 03
Commercial
& Industrial
Military
Unit
V
TERM
(2)
Terminal Voltage
with Respect
to GND
-0.5 to +7.0
-0.5 to +7.0
V
T
BIAS
Temperature
Under Bias
-55 to +125
-55 to +135
o
C
T
STG
Storage
Temperature
-55 to +120
-65 to +150
o
C
I
OUT
DC Output
Current
50
50
mA
2940 tbl 04
Symbol
Conditions
(2)
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
9
pF
C
OUT
Output Capacitance
V
OUT
= 3dV
10
pF
2940 tbl 07
Grade
Ambient
Temperature
GND
Vcc
Military
-55
O
C to+125
O
C
0V
5.0V
+
10%
Commercial
0
O
C to +70
O
C
0V
5.0V
+
10%
Industrial
-40
O
C to +85
O
C
0V
5.0V
+
10%
2940 tbl 05
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
V
GND
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
____
6.0
(2)
V
V
IL
Input Low Voltage
-0.5
(1)
____
0.8
V
2940 tbl 06
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IDT7007L25GI HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM
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IDT7007L25GI 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM
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IDT7007L25J8 功能描述:IC SRAM 256KBIT 25NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,同步 存儲(chǔ)容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT7007L25JB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM
IDT7007L25JI 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM