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參數(shù)資料
| 型號： | IDT7007L25G |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
| 中文描述： | 32K X 8 DUAL-PORT SRAM, 25 ns, CPGA68 |
| 封裝： | 1.800 X 1.800 INCH, 0.160 INCH HEIGHT, PGA-68 |
| 文件頁數(shù)： | 10/21頁 |
| 文件大?。?/td> | 257K |
| 代理商： | IDT7007L25G |
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
10
NOTES:
1. Transition is measured ±200mV from Low- or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM,
CE
= V
IL
and
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
. Either condition must be valid for the entire t
EW
time.
4. The specification for t
DH
must be met by the device supplying write data to the RAM under all operating conditions. Although t
DH
and t
OW
values will vary over voltage
and temperature, the actual t
DH
will always be smaller than the actual t
OW
.
5. 'X' in part numbers indicates power rating (S or L).
6. Industrial temperature: for other speeds, packages and powrs contact your sales office.
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage
(5,6)
Symbol
Parameter
7007X15
Com'l Only
7007X20
Com'l Only
7007X25
Com'l &
Military
Unit
Min.
Max.
Min.
Max.
Min.
Max.
WRITE CYCLE
t
WC
Write Cycle Time
15
____
20
____
25
____
ns
t
EW
Chip Enable to End-of-Write
(3)
12
____
15
____
20
____
ns
t
AW
Address Valid to End-of-Write
12
____
15
____
20
____
ns
t
AS
Address Set-up Time
(3)
0
____
0
____
0
____
ns
t
WP
Write Pulse Width
12
____
15
____
20
____
ns
t
WR
Write Recovery Time
0
____
0
____
0
____
ns
t
DW
Data Valid to End-of-Write
10
____
15
____
15
____
ns
t
HZ
Output High-Z Time
(1,2)
____
10
____
12
____
15
ns
t
DH
Data Hold Time
(4)
0
____
0
____
0
____
ns
t
WZ
Write Enable to Output in High-Z
(1,2)
____
10
____
12
____
15
ns
t
OW
Output Active from End-of-Write
(1,2,4)
0
____
0
____
0
____
ns
t
SWRD
SEM
Flag Write to Read Time
5
____
5
____
5
____
ns
t
SPS
SEM
Flag Contention Window
5
____
5
____
5
____
ns
2940 tbl 13a
Symbol
Parameter
7007X35
Com'l Only
7007X55
Com'l &
Military
Unit
Min.
Max.
Min.
Max.
WRITE CYCLE
t
WC
Write Cycle Time
35
____
55
____
ns
t
EW
Chip Enable to End-of-Write
(3)
30
____
45
____
ns
t
AW
Address Valid to End-of-Write
30
____
45
____
ns
t
AS
Address Set-up Time
(3)
0
____
0
____
ns
t
WP
Write Pulse Width
25
____
40
____
ns
t
WR
Write Recovery Time
0
____
0
____
ns
t
DW
Data Valid to End-of-Write
15
____
30
____
ns
t
HZ
Output High-Z Time
(1,2)
____
12
____
25
ns
t
DH
Data Hold Time
(4)
0
____
0
____
ns
t
WZ
Write Enable to Output in High-Z
(1,2)
____
12
____
25
ns
t
OW
Output Active from End-of-Write
(1,2,4)
0
____
0
____
ns
t
SWRD
SEM
Flag Write to Read Time
5
____
5
____
ns
t
SPS
SEM
Flag Contention Window
5
____
5
____
ns
2940 tbl 13b
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| IDT7007L25GB | HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
| IDT7007L25GI | HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
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|---|---|
| IDT7007L25GB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
| IDT7007L25GI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
| IDT7007L25J | 功能描述:IC SRAM 256KBIT 25NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT7007L25J8 | 功能描述:IC SRAM 256KBIT 25NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT7007L25JB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
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