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參數(shù)資料
| 型號： | IDT6198S35YB |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control |
| 中文描述： | 64K的的CMOS靜態(tài)RAM（16K的× 4位帶輸出）控制 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 79K |
| 代理商： | IDT6198S35YB |
6.3
3
IDT6198S/L
CMOS STATIC RAM 64K (16K x 4-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
V
GND
Supply Voltage
0
0
0
V
V
IH
Input High Voltage
2.2
—
6.0
V
V
IL
Input Low Voltage
–0.5
(1)
—
0.8
V
NOTE:
1. V
IL
(min.) = –3.0V for pulse width less than 20ns, once per cycle.
2987 tbl 05
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Temperature
GND
V
CC
Military
–55
°
C to +125
°
C
0
°
C to +70
°
C
0V
5V
±
10%
5V
±
10%
Commercial
0V
2987 tbl 06
DC ELECTRICAL CHARACTERISTICS
V
CC
= 5.0V
±
10%
IDT6198S
Min.
IDT6198L
Min.
Symbol
Parameter
Test Condition
Max.
Max.
Unit
|I
LI
|
Input Leakage Current
V
CC
= Max.,
V
IN
= GND to V
CC
MIL.
COM’L.
—
—
10
5
—
—
5
2
μ
A
|I
LO
|
Output Leakage Current
V
CC
= Max.,
CS
= V
IH,
V
OUT
= GND to V
CC
MIL.
COM’L.
—
—
10
5
—
—
5
2
μ
A
V
OL
Output Low Voltage
I
OL
= 10mA, V
CC
= Min.
I
OL
= 8mA, V
CC
= Min.
0.5
0.4
—
—
0.5
0.4
V
—
V
OH
Output High Voltage
I
OH
= –4mA, V
CC
= Min.
2.4
—
2.4
—
V
2987 tbl 07
DC ELECTRICAL CHARACTERISTICS
(1)
(V
CC
= 5V
±
10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
6198S15
6198L15
6198S20
6198L20
6198S25
6198L25
6198S35
6198L35
6198S45
6198L45
6198S55/70/85
6198L55/70/85
Symbol
Parameter
Power
Com’l. Mil.
Com’l.
Mil.
Com’l.
Mil.
Com’l. Mil.
Com’l.
Mil.
Com’l.
Mil.
Unit
I
CC1
Operating Power
Supply Current
CS
= V
IL
, Outputs Open
V
CC
= Max., f = 0
(2)
Dynamic Operating
Current
CS
= V
IL
, Outputs Open
V
CC
= Max., f = f
MAX(2)
Standby Power Supply
Current (TTL Level)
CS
≥
V
IH
, V
CC
= Max.,
Outputs Open, f = f
MAX(2)
Full Standby Power
Supply Current (CMOS
Level)
CS
≥
V
HC
,
V
CC
=Max., V
IN
≥
V
HC
or
V
IN
≤
V
LC
, f = 0
(2)
S
100
—
100
105
100
105
100
105
—
105
—
105
mA
L
75
—
70
80
70
80
70
80
—
80
—
80
I
CC2
S
135
—
130
160
125
155
125
140
—
140
—
140
mA
L
125
—
115
130
105
120
105
115
—
110
—
110
I
SB
S
60
—
55
70
50
60
45
50
—
50
—
50
mA
L
45
—
40
50
35
40
30
35
—
35
—
35
I
SB1
S
20
—
15
25
15
20
15
20
—
20
—
20
mA
L
1.5
—
0.5
1.5
0.5
1.5
0.5
1.5
—
1.5
—
1.5
NOTES:
1. All values are maximum guaranteed values.
2. At f = f
MAX
address and data inputs are cycling at the maximum frequency of read cycles of 1/t
RC
. f = 0 means no input lines change.
2987 tbl 06
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| IDT6198S45C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SRAM |
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| IDT6198S45D | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control |
| IDT6198S45DB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control |
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