
6.3
2
IDT6198S/L
CMOS STATIC RAM 64K (16K x 4-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
DIP/SOJ
TOP VIEW
5
6
7
8
9
10
11
12
L28-2
26
25
24
23
22
21
20
19
18
13 14 15 16 17
3
2
1
28 27
INDEX
A
5
A
6
A
7
A
8
A
13
A
12
A
11
A
10
A
9
I/O
3
I/O
2
I/O
1
CS
A
3
A
4
2987 drw 03
4
O
G
W
A
0
V
C
A
2
A
1
NC
N
I
0
N
N
N
LCC
TOP VIEW
PIN DESCRIPTIONS
Name
Description
A
0
–A
13
Address Inputs
CS
Chip Select
WE
Write Enable
OE
Output Enable
I/O
0
–
I/O
3
Data Input/Output
V
CC
Power
GND
Ground
2987 tbl 01
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Com’l.
Mil.
Unit
V
TERM
Terminal Voltage
with Respect
to GND
–0.5 to +7.0
–0.5 to +7.0
V
T
A
Operating
Temperature
0 to +70
–55 to +125
°
C
T
BIAS
Temperature
Under Bias
–55 to +125
–65 to +135
°
C
T
STG
Storage
Temperature
–55 to +125
–65 to +150
°
C
P
T
Power Dissipation
1.0
1.0
W
I
OUT
DC Output
Current
50
50
mA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2987 tbl 03
CAPACITANCE
(T
A
= +25
°
C, f = 1.0MHz)
Symbol
Parameter
(1)
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
7
pF
C
I/O
I/O Capacitance
V
OUT
= 0V
7
pF
NOTE:
1. This parameter is determined by device characterization, but is not
production tested.
2987 tbl 04
TRUTH TABLE
(1)
Mode
CS
WE
OE
I/O
Power
Standby
H
X
X
High-Z
Standby
Read
L
H
L
DATA
OUT
Active
Write
L
L
X
DATA
IN
Active
Read
L
H
H
High-Z
Active
NOTE:
1. H = V
IH
, L = V
IL
, X = Don't Care
2987 tbl 02
2987 drw 02
5
6
7
8
9
10
11
12
1
2
3
4
24
23
22
21
20
19
18
17
16
15
14
13
D24-1
&
SO24-4
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
V
CC
A
13
A
12
A
11
A
10
A
9
I/O
3
I/O
2
I/O
1
I/O
0
WE
GND
CS
OE
NC