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參數(shù)資料
| 型號(hào)： | IDT6168SA45LB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | Low-Power JFET-Input Operational Amplifier 8-SO 0 to 70 |
| 中文描述： | 4K X 4 STANDARD SRAM, 45 ns, CQCC20 |
| 封裝： | LCC-20 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 91K |
| 代理商： | IDT6168SA45LB |
2000 Integrated Device Technology, Inc.
FEBRUARY 2001
DSC-3090/05
1
Features
N
High-speed (equal access and cycle time)
– Mlitary: 25/45ns (max.)
– Industrial: 25ns (max.)
– Commercial: 15/20/25ns (max.)
N
Low power consumption
N
Battery backup operation—2V data retention voltage
(IDT6168LA only)
N
Available in high-density 20-pin ceramic or plastic DIP and
20-pin leadless chip carrier (LCC)
N
Produced with advanced CMOS high-performance
technology
N
CMOS process virtually eliminates alpha particle
soft-error rates
N
Bidirectional data input and output
N
Mlitary product compliant to MIL-STD-883, Class B
Description
The IDT6168 is a 16,384-bit high-speed static RAMorganized
as 4K x 4. It is fabricated using lDT’s high-performance, high-reliability
Functional Block Diagram
A
0
ADDRESS
DECODER
16,384-BIT
MEMORY ARRAY
I/O CONTROL
3090 drw 01
INPUT
DATA
CONTROL
WE
CS
V
CC
GND
A
11
I/O
0
I/O
1
I/O
2
I/O
3
,
CMOS technology. This state-of-the-art technology, combined with inno-
vative circuit design techniques, provides a cost-effective approach for
high-speed memory applications.
Access times as fast 15ns are available. The circuit also offers a
reduced power standby mode. When
CS
goes HIGH, the circuit will
automatically go to, and remain in, a standby mode as long as
CS
remains
HIGH. This capability provides significant systemlevel power and cooling
savings. The low-power (LA) version also offers a battery backup data
retention capability where the circuit typically consumes only 1μW
operating off a 2V battery. All inputs and outputs of the IDT6168 are
TTL-compatible and operate froma single 5V supply.
The IDT6168 is packaged in either a space saving 20-pin, 300-ml
ceramc or plastic DIP or a 20-pin LCC providing high board-level
packing densities.
Mlitary grade product is manufactured in compliance with the
latest revision of MIL-STD-883, Class B, making it ideally suited to
mlitary temperature applications demanding the highest level of
performance and reliability.
CMOS Static RAM
16K (4K x 4-Bit)
IDT6168SA
IDT6168LA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT6168SA45P | Low-Power JFET-Input Operational Amplifier 8-SO 0 to 70 |
| IDT6168SA25PB | CMOS STATIC RAM 16K (4K x 4-BIT) |
| IDT6168LA25PB | CMOS STATIC RAM 16K (4K x 4-BIT) |
| IDT6168SA45SO | CMOS STATIC RAM 16K (4K x 4-BIT) |
| IDT6168LA45SO | CMOS STATIC RAM 16K (4K x 4-BIT) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT6168SA45P | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (4K x 4-BIT) |
| IDT6168SA45PB | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (4K x 4-BIT) |
| IDT6168SA45SO | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (4K x 4-BIT) |
| IDT6168SA45SOB | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (4K x 4-BIT) |
| IDT6168SA55EB | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x4 SRAM |
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