參數(shù)資料
型號(hào): IDT6116LA35Y
廠(chǎng)商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類(lèi): DRAM
英文描述: Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC -40 to 85
中文描述: 2K X 8 STANDARD SRAM, 35 ns, PDSO24
封裝: 0.300 INCH, SOJ-24
文件頁(yè)數(shù): 7/10頁(yè)
文件大?。?/td> 91K
代理商: IDT6116LA35Y
5.1
7
IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF READ CYCLE NO. 2
(1, 2, 4)
TIMING WAVEFORM OF READ CYCLE NO. 1
(1, 3)
TIMING WAVEFORM OF READ CYCLE NO. 3
(1, 3, 4)
NOTES:
1.
WE
is HIGH for Read cycle.
2. Device is continously selected,
CS
is LOW.
3. Address valid prior to or coincident with
CS
transition LOW.
4.
OE
is LOW.
5. Transition is measured
±
500mV from steady state.
CS
t
ACS
DATA
OUT
t
CLZ(5)
t
CHZ(5)
DATA VALID
3089 drw 08
ADDRESS
t
RC
t
AA
t
OH
t
OH
DATA
OUT
3089 drw 07
PREVIOUS DATA VALID
DATA VALID
ADDRESS
OE
CS
t
RC
t
AA
t
OE
t
ACS
t
CLZ(5)
DATA
OUT
t
OH
t
OLZ(5)
t
OHZ(5)
t
CHZ(5)
3089 drw 06
DATA
VALID
t
PD
I
CC
I
SB
t
PU
V
CC
Supply
Currents
相關(guān)PDF資料
PDF描述
IDT6116LA45D Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-PDIP -40 to 85
IDT6116LA45P Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-PDIP -40 to 85
IDT6116LA45Y CMOS STATIC RAM 16K (2K x 8 BIT)
IDT6116LA55D CMOS STATIC RAM 16K (2K x 8 BIT)
IDT6116LA55DB Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC 0 to 70
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT6116LA35YB 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT)
IDT6116LA35YI 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT)
IDT6116LA45D 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT)
IDT6116LA45DB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 45NS 24CERDIP
IDT6116LA45L24 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x8 SRAM