參數(shù)資料
型號(hào)： IDT54FCT827CPB
廠商： Integrated Device Technology, Inc.
英文描述： HIGH-PERFORMANCE CMOS BUFFERS
中文描述： 高性能CMOS緩沖器
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 111K
代理商： IDT54FCT827CPB
IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
7.20
3
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: V
LC
= 0.2V; V
HC
= V
CC
– 0.2V
Commercial: T
A
= 0
°
C to +70
°
C, V
CC
= 5.0V
±
5%; Military: T
A
= –55
°
C to +125
°
C, V
CC
= 5.0V
±
10%
NOTES
:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25
°
C ambient and maximum loading.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. This parameter is guaranteed but not tested.
2609 tbl 06
Symbol
V
IH
V
IL
Parameter
Test Conditions
(1)
Min.
2.0
—
Typ.
(2)
—
—
Max.
—
0.8
Unit
V
V
μ
A
Input HIGH Level
Input LOW Level
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
I
I H
Input HIGH Current
V
CC
= Max.
V
I
= V
CC
V
I
= 2.7V
V
I
= 0.5V
V
I
= GND
—
—
—
—
—
—
—
—
5
5
(4)
–5
(4)
–5
I
I L
Input LOW Current
I
OZH
Off State (High Impedance)
Output Current
V
CC
= Max.
V
O
= V
CC
V
O
= 2.7V
V
O
= 0.5V
—
—
—
—
—
—
10
μ
A
10
(4)
–10
(4)
I
OZL
V
O
= GND
—
—
–75
—
–0.7
–120
–10
–1.2
—
V
IK
I
OS
Clamp Diode Voltage
Short Circuit Current
V
CC
= Min., I
N
= –18mA
V
CC
= Max.
(3)
, V
O
= GND
V
CC
= 3V, V
IN
= V
LC
or V
HC
, I
OH
= –32
μ
A
V
CC
= Min.
V
mA
V
OH
Output HIGH Voltage
V
HC
V
HC
2.4
V
CC
V
CC
4.3
—
—
—
V
I
OH
= –300
μ
A
I
OH
= –15mA MIL.
V
IN
= V
IH
or V
IL
I
OH
= –24mA COM'L.
2.4
—
—
4.3
GND
GND
—
V
LC
V
LC(4)
V
OL
Output LOW Voltage
V
CC
= 3V, V
IN
= V
LC
or V
HC
, I
OL
= 300
μ
A
V
CC
= Min.
V
I
OL
= 300
μ
A
I
OL
= 32mA MIL.
I
OL
= 48mA COM'L.
V
IN
= V
IH
or V
IL
—
—
0.3
0.3
0.5
0.5
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