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參數(shù)資料
| 型號： | IDT54FCT16374CTPVB |
| 廠商： | Integrated Device Technology, Inc. |
| 元件分類： | 通用總線功能 |
| 英文描述： | FAST CMOS 16-BIT REGISTER (3-STATE) |
| 中文描述： | 快速CMOS 16位寄存器（3態(tài)） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 137K |
| 代理商： | IDT54FCT16374CTPVB |
IDT54/74FCT16374T/AT/CT/ET, 162374T/AT/CT/ET
FAST CMOS 16-BIT REGISTER (3-STATE)
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
5.8
3
PIN DESCRIPTION
FUNCTION TABLE
(1)
ABSOLUTE MAXIMUM RATINGS
(1)
CAPACITANCE
(T
A
= +25
°
C, f = 1.0MHz)
2542 tbl 01
2542 tbl 02
NOTE:
1. This parameter is measured at characterization but not tested.
2542 lnk 04
Symbol
C
IN
Parameter
(1)
Input
Capacitance
I/O
Capacitance
Conditions
V
IN
= 0V
Typ.
3.5
Max.
6.0
Unit
pF
C
I/O
V
OUT
= 0V
3.5
8.0
pF
Pin Names
xDx
xCLK
Description
Data Inputs
Clock Inputs
xOx
x
OE
3-State Outputs.
3-State Output Enable Input (Active LOW)
Inputs
xCLK
L
Outputs
xOx
Z
Function
Hi-Z
xDx
X
x
OE
H
X
L
H
H
↑
↑
↑
↑
H
L
L
Z
L
H
Load
Register
L
H
H
H
Z
Z
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Z = High Impedance
↑
= LOW-to-HIGH Transition
Symbol
V
TERM(2)
Terminal Voltage with Respect to
GND
V
TERM(3)
Terminal Voltage with Respect to
GND
Description
Max.
Unit
V
–0.5 to +7.0
–0.5 to
V
CC
+0.5
–65 to +150
–60 to +120 mA
V
T
STG
I
OUT
Storage Temperature
DC Output Current
°
C
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. All device terminals except FCT162XXXT Output and I/O terminals.
3. Output and I/O terminals for FCT162XXXT.
2542 lnk 03
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT54FCT16374ETE | Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 |
| IDT54FCT16374ETEB | FAST CMOS 16-BIT REGISTER (3-STATE) |
| IDT54FCT16374ETPA | Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 |
| IDT54FCT16374ETPAB | FAST CMOS 16-BIT REGISTER (3-STATE) |
| IDT54FCT16374ETPF | FAST CMOS 16-BIT REGISTER (3-STATE) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT54FCT16374ET | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:FAST CMOS 16-BIT REGISTER (3-STATE) |
| IDT54FCT16374ETE | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:FAST CMOS 16-BIT REGISTER (3-STATE) |
| IDT54FCT16374ETEB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:FAST CMOS 16-BIT REGISTER (3-STATE) |
| IDT54FCT16374ETPA | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:FAST CMOS 16-BIT REGISTER (3-STATE) |
| IDT54FCT16374ETPAB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:FAST CMOS 16-BIT REGISTER (3-STATE) |
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