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參數(shù)資料
| 型號： | IDT54FCT162827CTPVB |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | CAP 22UF 20V 20% TANT SMD-7343-31 TR-7-PL GOLD LOWESR-300 |
| 中文描述： | 快速CMOS 20位緩沖器 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 120K |
| 代理商： | IDT54FCT162827CTPVB |
5.17
5
IDT54/74FCT16827AT/BT/CT/ET, 162827AT/BT/CT/ET
FAST CMOS 20-BIT BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
2773 tbl 08
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25
°
C ambient.
3. Per TTL driven input (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
I
CC
D
H
N
T
+ I
CCD
(f
CP
N
CP
/2 + f
i
N
i
)
I
CC
= Quiescent Current (I
CCL
,
I
CCH
and I
CCZ
)
I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
N
CP
= Number of Clock Inputs at f
CP
f
i
= Input Frequency
N
i
= Number of Inputs at f
i
Symbol
I
CC
Parameter
Test Conditions
(1)
Min.
—
Typ.
(2)
0.5
Max.
1.5
Unit
mA
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply Current
(4)
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
x
OE
1
= x
OE
2
= GND
One Input Toggling
50% Duty Cycle
V
CC
= Max.
Outputs Open
fi = 10MHz
50% Duty Cycle
x
OE
1
= x
OE
2
= GND
One Bit Toggling
V
CC
= Max.
Outputs Open
fi = 2.5MHz
50% Duty Cycle
x
OE
1
= x
OE
2
= GND
Twenty Bits Toggling
I
CCD
V
IN
= V
CC
V
IN
= GND
—
60
100
μ
A/
MHz
I
C
Total Power Supply Current
(6)
V
IN
= V
CC
V
IN
= GND
—
0.6
1.5
mA
V
IN
= 3.4V
V
IN
= GND
—
0.9
2.3
V
IN
= V
CC
V
IN
= GND
—
3.0
5.5
(5)
V
IN
= 3.4V
V
IN
= GND
—
8.0
20.5
(5)
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| IDT54FCT162827ET | FAST CMOS 20-BIT BUFFERS |
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| IDT54FCT162827ETEB | FAST CMOS 20-BIT BUFFERS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT54FCT162827ET | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:FAST CMOS 20-BIT BUFFERS |
| IDT54FCT162827ETE | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:FAST CMOS 20-BIT BUFFERS |
| IDT54FCT162827ETEB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:FAST CMOS 20-BIT BUFFERS |
| IDT54FCT162827ETPA | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:FAST CMOS 20-BIT BUFFERS |
| IDT54FCT162827ETPAB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:FAST CMOS 20-BIT BUFFERS |
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