參數(shù)資料
型號: IDB31
廠商: GE Security, Inc.
英文描述: PLANAR SILICON BIDIRECTIONAL TRIGGER DIODE
中文描述: 平面硅雙向觸發(fā)二極管
文件頁數(shù): 1/3頁
文件大?。?/td> 144K
代理商: IDB31
IDB31
PLANAR SILICON BIDIRECTIONAL TRIGGER DIODE
FEATURES
¨
Intend for use in triac and thyristors circuits
¨
V
BO
: 30V to 34V
¨
Excellent Breakover Voltage
Symmetry: typ. 1%
¨
Low Breakover Current: 20μA typ.
¨
Marking: B31
¨
Bidirectional Operation:
Pin 2 and 3 connected to the circuit
Pin 1 has to stay open
IMPORTANT
Do not connect Pin 1 to ground, VCC or any signal lines.
Pin 1 has to be soldered at a solderpad without any further
lines
MECHANICAL DATA
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking code:
B31
MAXIMUM RATINGS
In accordance with the Absolut Maximum Rating System (IEC 134).
SYMBOL
VALUE
UNIT
Power dissipation
P
tot
150
(NOTE 1)
mW
Repetitive peak on-state current
tp=20μs, f=100Hz
I
TRM
2
Amps
Operating junction temperature range
at tp < 1 s, T
amb
= 25 C
T
J
-40 to +125
C
Storage temperature range
T
S
-40 to +125
C
Thermal resistance junction to ambient air
R
thA
400
(NOTE 1)
C/W
NOTES:
(1) Device on fiberglass substrate, see layout in Fig. 4
.016 (0.4)
)
.037(0.95).037(0.95)
m
.122 (3.1)
.118 (3.0)
.016 (0.4)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.094 (2.4)
.
.
)
.
.
SOT-23
Dimensions in inches and (millimeters)
1/15/99
1
2
3
Top View
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