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參數(shù)資料
| 型號(hào)： | ICTE-10 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | GT 35C 35#12 SKT RECP |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, MOSORB, CASE 41A-04, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 43K |
| 代理商： | ICTE-10 |
ICTE5.0 THRU ICTE15C SERIES
T
RANS
Z
ORB
TRANSIENT VOLTAGE SUPPRESSOR
Stand-off Voltage -
5.0 to 15 Volts
Peak Pulse Power -
1500 Watts
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated junction
1500W Peak pulse power capability with a
10/1000
μ
s waveform, repetition rate (duty cycle): 0.05%
Excellent clamping capability
Low incremental surge resistance
Fast response time: typically less than
1.0ps from 0 Volts to V
(BR)
for uni-directional
and 5.0ns for bi-directional
Ideal for data and bus line applications
High temperature soldering guaranteed:
265°C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
Includes 1N6373 thru 1N6385
MECHANICAL DATA
Case:
Molded plastic over a passivated junction
Terminals:
Plated Axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
For uni-directional types the color band denotes the
cathode, which is posititive with respect to the anode under
normal TVS operation
Mounting Position:
Any
Weight:
0.045 ounce, 1.2 grams
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNITS
Peak pulse power dissipation with a
10/1000
μ
s waveform
(NOTE 1, FIG. 1)
Steady state power dissipation, T
L
= 75°C
at lead lengths 0.375" (9.5mm)
Peak pulse current with a 10/1000
μ
s
waveform
(NOTE 1, FIG. 3)
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load for uni-directional
only (JEDEC Method)
(NOTE 2)
Maximum instantaneous forward voltage
at 100A for uni-directional only
Operating junction and
storage temperature range
P
PPM
Minimum 1500
Watts
P
M(AV)
6.5
Watts
I
PPM
SEE TABLE 1 & 2
Amps
I
FSM
200
Amps
V
F
3.5
Volts
T
J
, T
STG
-55 to +175
°C
NOTES:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2
(2) 8.3ms single half sine-wave, duty cycle=4 pulses per minute maximum
1/21/99
1.00 (25.4)
MIN.
1.00 (25.4)
MIN.
0.375 (9.527)
0.360 (9.146)
0.205 (5.207)
0.190 (4.826)
DIA.
0.042 (1.07)
0.038 (0.958)
DIA.
Case Style 1.5KE
Dimensions in inches and (millimeters)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ICTE-15 | 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors |
| ICTE-12 | 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors |
| ICTE-10 | GT 35C 35#12 SKT RECP |
| ICTE-10C | TRANSIENT ABSORPTION ZENER |
| ICTE-12 | TRANSIENT ABSORPTION ZENER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ICTE10/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1.5KW 10V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| ICTE10/4 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1.5KW 10V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| ICTE10/54 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1.5KW 10V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| ICTE-10/MPTE-10 | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Silicon Avalanche Diodes - 1500 Watt Axial Leaded Transient Voltage Suppressors |
| ICTE10/TR12 | 制造商:Microsemi Corporation 功能描述:ICTE10/TR12 - Tape and Reel |
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