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參數(shù)資料
| 型號： | ICL7667CBAZA |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual Power MOSFET Driver |
| 中文描述： | 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8 |
| 封裝： | ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 202K |
| 代理商： | ICL7667CBAZA |
6
FN2853.5
April 4, 2006
Direct Drive of MOSFETs
Figure 11 shows interfaces between the ICL7667 and typical
switching regulator ICs. Note that unlike the DS0026, the
ICL7667 does not need a dropping resistor and speedup
capacitor between it and the regulator IC. The ICL7667, with
its high slew rate and high voltage drive can directly drive the
gate of the MOSFET. The SG1527 IC is the same as the
SG1525 IC, except that the outputs are inverted. This
inversion is needed since ICL7667 is an inverting buffer.
Transformer Coupled Drive of MOSFETs
Transformers are often used for isolation between the logic
and control section and the power section of a switching
regulator. The high output drive capability of the ICL7667
enables it to directly drive such transformers. Figure 11
shows a typical transformer coupled drive circuit. PWM ICs
with either active high or active low output can be used in
this circuit, since any inversion required can be obtained by
reversing the windings on the secondaries.
Buffered Drivers for Multiple MOSFETs
In very high power applications which use a group of
MOSFETs in parallel, the input capacitance may be very large
and it can be difficult to charge and discharge quickly. Figure
13 shows a circuit which works very well with very large
capacitance loads. When the input of the driver is zero, Q
1
is
held in conduction by the lower half of the ICL7667 and Q
2
is
clamped off by Q
1
. When the input goes positive, Q
1
is turned
off and a current pulse is applied to the gate of Q
2
by the
upper half of the ICL7667 through the transformer, T
1
. After
about 20ns, T
1
saturates and Q
2
is held on by its own C
GS
and the bootstrap circuit of C
1
, D
1
and R
1
. This bootstrap
circuit may not be needed at frequencies greater than 10kHz
since the input capacitance of Q
2
discharges slowly.
18
16
14
12
10
8
6
4
2
0
-2
0
2
4
GATE CHARGE - Q
G
(NANO-COULOMBS)
6
8
10
12
14
16
18
20
I
D
= 1A
V
DD
= 50V
G
680pF
630pF
212pF
V
DD
= 200V
V
DD
= 375V
FIGURE 9. MOSFET GATE DYNAMIC CHARACTERISTICS
FIGURE 10A.
FIGURE 10B.
FIGURE 10. DIRECT DRIVE OF MOSFET GATES
SG1527
+V
C
GND
B
A
ICL7667
+V
-V
15V
IRF730
IRF730
+165V
DC
TL494
+V
C
GND
C2
C1
ICL7667
+V
-V
15V
IRF730
IRF730
+165V
DC
E2
E1
+15V
1K
1K
V
OUT
ICL7667
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ICL7667CBAZA-T | 功能描述:功率驅(qū)動器IC W/ANNEAL DL PWR MOS DRVR COM TAPE & RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ICL7667CJA | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ICL7667CPA | 功能描述:功率驅(qū)動器IC DL PWR MOS DRVR COM RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ICL7667CPA+ | 功能描述:功率驅(qū)動器IC Dual Power Inverting MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ICL7667CPAZ | 功能描述:功率驅(qū)動器IC W/ANNEAL DL PWR MOS DRVR COM RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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