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參數(shù)資料
| 型號： | IC62VV25616LL-100B |
| 英文描述： | 256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM |
| 中文描述： | 256Kx16位1.8V和超低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 321K |
| 代理商： | IC62VV25616LL-100B |
2
Integrated Circuit Solution Inc.
LPSR019-0A 11/13/2001
IC62VV25616L
IC62VV25616LL
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. Copyright 2001, Integrated Circuit Solution Inc.
DESCRIPTION
The
ICSI
IC62VV25616L and IC62VV25616LL are low-power,
4.194,304 bit static RAMs organized as 262,144 words by 16
bits. They are fabricated using
ICSI
's high-performance CMOS
technology. This highly reliable process coupled with innova-
tive circuit design techniques, yields high-performance and
low power consumption devices.
When
CE
is HIGH (deselected) or both
LB
and
UB
are HIGH,
the device assumes a standby mode at which the power
dissipation can be reduced by using CMOS input levels.
Easy memory expansion is provided by using Chip Enable
Output and Enable inputs,
CE
and
OE
. The active LOW Write
Enable (
WE
) controls both writing and reading of the memory.
A data byte allows Upper Byte (
UB
) and Lower Byte (
LB
)
access.
The IC62VV25616L and IC62VV25616LL are packaged in the
JEDEC standare 44-pin TSOP-2 and 48-pin 6*8mm TF-BGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A17
CE
OE
WE
UB
LB
256K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
256K x 16 1.8V ULTRA
LOW POWER CMOS STATIC RAM
FEATURES
High-speed access times: 55, 70, 100 ns
CMOS low power operation
I
CC
1
=10mA (typical)* operating
I
SB
2
=1
μA
(typical)* CMOS standby
* Typical values are measured at V
CC
=1.8V,
T
A
=25°C
TTL compatible interface levels
Single 1.65V-2.2V Vcc power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Available in the 44-pin TSOP-2 and 48-pin
6*8mm TF-BGA
相關PDF資料 |
PDF描述 |
|---|---|
| IC62VV25616LL-100BI | 256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM |
| IC62VV25616LL-100T | 256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM |
| IC62VV25616LL-100TI | 256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM |
| IC62VV25616LL-55B | 256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM |
| IC62VV25616LL-55BI | 256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IC62VV25616LL-100BI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM |
| IC62VV25616LL-100T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM |
| IC62VV25616LL-100TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM |
| IC62VV25616LL-55B | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM |
| IC62VV25616LL-55BI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM |
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