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參數(shù)資料
| 型號： | IC62LV256-100UI |
| 英文描述： | 32K x 8 Low Power SRAM with 3.3V |
| 中文描述： | 32K的× 8低功耗SRAM與3.3V |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 88K |
| 代理商： | IC62LV256-100UI |
IC62LV256
8
Integrated Circuit Solution Inc.
ALSR007-0A 10/5/2001
WRITE CYCLE NO. 2 (
CE
Controlled)
(1,2)
HIGH-Z
DATA UNDEFINED
DATA-IN VALID
t
WC
t
SCE
t
SA
t
HA
t
PWE
t
AW
t
HZWE
t
SD
t
HD
t
LZWE
ADDRESS
D
IN
CE
WE
D
OUT
Notes:
1. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE
≥
V
IH
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IC62LV256-100U | 32K x 8 Low Power SRAM with 3.3V |
| IC62LV256-100TI | 32K x 8 Low Power SRAM with 3.3V |
| IC62LV256-100T | RES 82.5 OHM 1% 1206 1110-0820 |
| IC62LV256-100N | 32K x 8 Low Power SRAM with 3.3V |
| IC62LV256-100JI | 32K x 8 Low Power SRAM with 3.3V |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC62LV25616L | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM |
| IC62LV25616L-100B | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM |
| IC62LV25616L-100BI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM |
| IC62LV25616L-100T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM |
| IC62LV25616L-100TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM |
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