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參數(shù)資料
| 型號： | IC62LV256-100JI |
| 英文描述： | 32K x 8 Low Power SRAM with 3.3V |
| 中文描述： | 32K的× 8低功耗SRAM與3.3V |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 88K |
| 代理商： | IC62LV256-100JI |
IC62LV256
Integrated Circuit Solution Inc.
ALSR007-0A 10/5/2001
7
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2,3)
(Over Operating Range)
-45 ns
Min.
-70 ns
Min.
-100 ns
Min.
Symbol
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
(4)
t
SD
t
HD
Parameter
Max.
Max.
Max.
Unit
Write Cycle Time
45
—
70
—
100
—
ns
CE
to Write End
35
—
60
—
80
—
ns
Address Setup Time to Write End
25
—
60
—
80
—
ns
Address Hold from Write End
0
—
0
—
0
—
ns
Address Setup Time
0
—
0
—
0
—
ns
WE
Pulse Width
25
—
55
—
60
—
ns
Data Setup to Write End
20
—
30
—
35
—
ns
Data Hold from Write End
0
—
0
—
0
—
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured
±
500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
4. Tested with
OE
HIGH.
AC WAVEFORMS
WRITE CYCLE NO. 1 (
WE
Controlled)
(1,2)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCE
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
CE
WE
D
OUT
D
IN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IC62LV256-100J | 32K x 8 Low Power SRAM with 3.3V |
| IC62LV256 | 32K x 8 Low Power SRAM with 3.3V |
| IC62LV2568L-100B | 256K x 8 LOW POWER AND LOW Vcc CMOS STATIC RAM |
| IC62LV2568L-100BI | 256K x 8 LOW POWER AND LOW Vcc CMOS STATIC RAM |
| IC62LV2568L-100H | 256K x 8 LOW POWER AND LOW Vcc CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC62LV256-100N | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K x 8 Low Power SRAM with 3.3V |
| IC62LV256-100T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K x 8 Low Power SRAM with 3.3V |
| IC62LV256-100TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K x 8 Low Power SRAM with 3.3V |
| IC62LV256-100U | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K x 8 Low Power SRAM with 3.3V |
| IC62LV256-100UI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K x 8 Low Power SRAM with 3.3V |
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