參數(shù)資料
型號: IC61LV2568-12KI
英文描述: 256K x 8 Hight Speed SRAM with 3.3V
中文描述: 256K × 8 Hight高速SRAM與3.3V
文件頁數(shù): 3/9頁
文件大?。?/td> 252K
代理商: IC61LV2568-12KI
IC61LV2568
Integrated Circuit Solution, Inc.
AHSR023-0A
09/12/2001
3
PIN CONFIGURATION
36-Pin SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
A4
A3
A2
A1
A0
CE
I/O0
I/O1
Vcc
GND
I/O2
I/O3
WE
A17
A16
A15
A14
A13
NC
NC
NC
NC
NC
A5
A6
A7
A8
OE
I/O7
I/O6
GND
Vcc
I/O5
I/O4
A9
A10
A11
A12
NC
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
A4
A3
A2
A1
A0
CE
I/O0
I/O1
Vcc
GND
I/O2
I/O3
WE
A17
A16
A15
A14
A13
NC
A5
A6
A7
A8
OE
I/O7
I/O6
GND
Vcc
I/O5
I/O4
A9
A10
A11
A12
NC
NC
PIN CONFIGURATION
44-Pin TSOP-2
PIN DESCRIPTIONS
A0-A17
Address Inputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
I/O0-I/O7
Input/Output
Vcc
Power
GND
Ground
NC
No Connection
TRUTH TABLE
Mode
WE
X
CE
H
OE
X
I/O Operation
Vcc Current
Not Selected
(Power-down)
Output Disabled
Read
Write
High-Z
I
SB
1
, I
SB
2
H
H
L
L
L
L
H
L
X
High-Z
D
OUT
D
IN
I
CC
I
CC
I
CC
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
CC
V
TERM
T
BIAS
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Temperature Under Bias
Value
Unit
V
–0.5 to +4.6
–0.5 to Vcc + 0.5 V
–10 to +85
–45 to +90
–65 to +150
1
±20
Com.
Ind.
°C
T
STG
P
D
I
OUT
Storage Temperature
Power Dissipation
DC Output Current
°C
W
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
相關PDF資料
PDF描述
IC61LV2568-12K 256K x 8 Hight Speed SRAM with 3.3V
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