參數(shù)資料
型號: IC42S32200L
英文描述: 512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 為512k字× 32位× 4銀行(64兆位)同步動態(tài)RAM
文件頁數(shù): 54/62頁
文件大?。?/td> 900K
代理商: IC42S32200L
IC42S32200
IC42S32200L
54
Integrated Circuit Solution Inc.
DR036-0D 02/04/2005
Figure 19.2.Full Page Write Cycle (Burst Length=Full Page,CAS#Latency=2)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
RAx
RAx
CBx
RBx
CAx
RBy
RBy
t
CK2
RBx
DAx
DAx+1 DAx+2 DAx+3
DAx-1
DAx
DAx+1
DBx
DBx+1 DBx+2 DBx+3 DBx+4 DBx+5 DBx+6
CLK
CKE
CS#
RAS#
CAS#
WE#
BS0,1
A10
A0-A9
DQM
DQ
Hi-Z
Write
Command
Bank A
Activate
Command
Bank A
Write
Command
Bank B
Full Page burst operation does
not terminate when the burst
length is satisfied; the burst counter
increments and continues bursting
beginning with the starting address.
Activate
Command
Bank B
Activate
Command
Bank B
Precharge
Command
Bank B
High
Burst Stop
Command
Data is ignored
The burst counter wraps
from the highest order
page address back to zero
during this time interval
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