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參數(shù)資料
| 型號： | IC42S16800-8TI(G) |
| 英文描述： | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 4（2）M中的x 8（16）位× 4銀行（128 - Mbit的）同步動態(tài)RAM |
| 文件頁數(shù)： | 6/69頁 |
| 文件大?。?/td> | 1118K |
| 代理商： | IC42S16800-8TI(G) |
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IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
6
Integrated Circuit Solution Inc.
DR023-0E 6/11/2004
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
DD
V
DDQ
V
I
V
O
I
O
P
D
T
OPT
Supply Voltage (with respect to V
SS
)
Supply Voltage for Output (with respect to V
SSQ
)
Input Voltage
(with respect to V
SS
)
Output Voltage
(with respect to V
SSQ
)
Short circuit output current
Power Dissipation (
T
A
= 25 °C)
Operating Temperature Commercial
Industrial
Storage Temperature
–0.5 to +4.6
–0.5 to +4.6
–0.5 to V
DD
+0.5
–1.0 to V
DDQ
+0.5
50
1
0 to +70
-40 to +85
–65 to +150
V
V
V
V
mA
W
°C
T
STG
°C
Notes:
1.
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent
damage. The device is not meant to be operated under conditions outside the limits described in the
operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended
periods may affect device reliability.
DC RECOMMENDED OPERATING CONDITIONS
(
At unless otherwise noted)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
DD
V
DDQ
V
IH
V
IL
Supply Voltage
Supply Voltage for DQ
High Level Input Voltage (all Inputs)
Low Level Input Voltage (all Inputs)
3.0
3.0
2.0
-1.2
3.3
3.3
—
—
3.6
3.6
V
V
V
V
V
DD
+ 1.2
+0.8
Notes:
1.
2.
3.
All voltages are referenced to V
SS
=0V
V
IH
(max) for pulse width with
≤
3ns of duration
V
IL
(min) for pulse width with
≤
3ns of duration
CAPACITANCE CHARACTERISTICS
(At V
DD
= V
DDQ
= 3.3 ± 0.3V, V
SS
= V
SSQ
= 0V , unless otherwise note
d
)
Symbol
Parameter
Min. Max.
Unit
-6
-7/-8
C
IN
C
CLK
C
I
/
O
Input Capacitance, address & control pin
I
nput Capacitance, CLK pin
Data Input/Output Capacitance
2.5
2.5
4.0
3.8
3.5
6.5
5.0
4.0
6.5
pF
pF
pF
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