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參數(shù)資料
| 型號(hào)： | IC41LV4105-60T |
| 英文描述： | 1Mx4 bit Dynamic RAM with Fast Page Mode |
| 中文描述： | 1Mx4位動(dòng)態(tài)RAM的快速頁面模式 |
| 文件頁數(shù)： | 7/17頁 |
| 文件大小： | 510K |
| 代理商： | IC41LV4105-60T |
IC41C4105 and IC41LV4105
Integrated Circuit Solution Inc.
DR019-0A 08/01/2001
7
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-
35
-
50
-
60
Symbol
Parameter
Min.
Max.
35
10
18
10K
10K
28
Min.
Max.
50
14
25
10K
10K
36
Min.
Max. Units
60
15
30
10K
10K
45
t
RC
t
RAC
t
CAC
t
AA
t
RAS
t
RP
t
CAS
t
CP
t
CSH
t
RCD
t
ASR
t
RAH
t
ASC
t
CAH
t
AR
Random READ or WRITE Cycle Time
Access Time from
RAS
(6, 7)
Access Time from
CAS
(6, 8, 15)
Access Time from Column-Address
(6)
RAS
Pulse Width
RAS
Precharge Time
CAS
Pulse Width
(23)
CAS
Precharge Time
(9)
CAS
Hold Time
(21)
RAS
to
CAS
Delay Time
(10, 20)
Row-Address Setup Time
Row-Address Hold Time
Column-Address Setup Time
(20)
Column-Address Hold Time
(20)
Column-Address Hold Time
(referenced to
RAS
)
RAS
to Column-Address Delay Time
(11)
Column-Address to
RAS
Lead Time
RAS
to
CAS
Precharge Time
RAS
Hold Time
CAS
to Output in Low-Z
(15, 24)
CAS
to
RAS
Precharge Time
(21)
Output Disable Time
(19, 24)
Output Enable Time
(15, 16)
OE
LOW to
CAS
HIGH Setup Time
Read Command Setup Time
(17, 20)
Read Command Hold Time
(referenced to
RAS
)
(12)
Read Command Hold Time
(referenced to
CAS
)
(12, 17, 21)
Write Command Hold Time
(17)
Write Command Hold Time
(referenced to
RAS
)
(17)
Write Command Pulse Width
(17)
Write Command to
RAS
Lead Time
(17)
Write Command to
CAS
Lead Time
(17, 21)
Write Command Setup Time
(14, 17, 20)
Data-in Hold Time (referenced to
RAS
)
60
35
20
6
6
35
11
0
6
0
6
30
90
50
30
8
8
50
19
0
8
0
8
40
110
60
40
10
10
60
20
0
10
0
10
40
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RAD
t
RAL
t
RPC
t
RSH
t
CLZ
t
CRP
t
OD
t
OE
t
OES
t
RCS
t
RRH
10
18
0
8
3
5
3
5
0
0
20
15
10
14
25
0
14
3
5
3
-
5
0
0
25
15
15
15
30
0
15
3
5
3
-
5
0
0
30
15
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RCH
0
0
0
ns
t
WCH
t
WCR
5
30
8
40
10
50
ns
ns
t
WP
t
RWL
t
CWL
t
WCS
t
DHR
5
8
8
0
30
8
14
14
0
40
10
15
15
0
45
ns
ns
ns
ns
ns
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| IC41C82002-60J | 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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相關(guān)代理商/技術(shù)參數(shù) |
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| IC41LV44002-50J | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4Mx4 bit Dynamic RAM with EDO Page Mode |
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| IC41LV44002-50T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4Mx4 bit Dynamic RAM with EDO Page Mode |
| IC41LV44002-50TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4Mx4 bit Dynamic RAM with EDO Page Mode |
| IC41LV44002-60J | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4Mx4 bit Dynamic RAM with EDO Page Mode |
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