參數(shù)資料
型號: HY57V651620BLTC-55
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 4 Banks x 1M x 16Bit Synchronous DRAM
中文描述: 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
文件頁數(shù): 4/12頁
文件大?。?/td> 81K
代理商: HY57V651620BLTC-55
HY57V651620B
Rev. 1.9/Apr.01
4
ABSOLUTE MAXIMUM RATINGS
Note :
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION
(TA=0 to 70
°
C
)
Note :
1.All voltages are referenced to V
SS
= 0 V
2.VDD(min) of HY57V651620B(L)TC-55/6/7 is 3.135V
3.V
IH
(max) is acceptable 5.6V AC pulse width with
3ns of duration
4.V
IL
(min) is acceptable -2.0V AC pulse width with
3ns of duration
AC OPERATING CONDITION
(TA=0 to 70
°
C
, V
D D
=3.3
±
0.3V
Note2
, V
SS
= 0 V )
Note :
1. Output load to measure access time is equivalent to two TTL gates and one capacitor (50pF)
For details, refer to AC/DC output circuit
2. VDD(min) of HY57V651620B(L)TC-55/6/7 is 3.135V
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
0 ~ 7 0
°
C
Storage Temperature
T
S T G
-55 ~ 125
°
C
Voltage on Any Pin relative to V
S S
V
IN
, V
O U T
-1.0 ~ 4.6
V
Voltage on V
D D
relative to V
SS
V
DD,
V
D D Q
-1.0 ~ 4.6
V
Short Circuit Output Current
I
O S
50
m A
Power Dissipation
P
D
1
W
Soldering Temperature
T i m e
T
SOLDER
260
10
°
C
S e c
Parameter
Symbol
Min
Typ.
M a x
Unit
Note
Power Supply Voltage
V
D D
, V
D D Q
3.0
3.3
3.6
V
1,2
Input High Voltage
V
IH
2.0
3.0
V
DDQ
+ 2.0
V
1,3
Input Low Voltage
V
IL
V
S S Q
- 2.0
0
0.8
V
1,4
Parameter
S y m b o l
Value
Unit
Note
AC Input High / Low Level Voltage
V
IH
/ V
IL
2.4/0.4
V
Input Timing Measurement Reference Level Voltage
Vtrip
1.4
V
Input Rise / Fall Time
tR / tF
1
n s
Output Timing Measurement Reference Level
Voutref
1.4
V
Output Load Capacitance for Access Time Measurement
C L
50
pF
1
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