參數(shù)資料
型號(hào)： IBM25PPC740L-GB366A2T
英文描述： MICROPROCESSOR|32-BIT|CMOS|BGA|255PIN|CERAMIC
中文描述： 微處理器| 32位|的CMOS | BGA封裝| 255PIN |陶瓷
文件頁(yè)數(shù)： 13/50頁(yè)
文件大?。?/td> 516K
代理商： IBM25PPC740L-GB366A2T
5/20/99
Version 1.51
PowerPC 740 and PowerPC 750 Datasheet
Page 9
PowerPC 740 and PowerPC 750 Embedded Microprocessor
IBM CMOS 0.20 um Copper Technology EMPPC740L and EMPPC750L
DC Electrical Specifications
See Section “Recommended Operating Conditions,” on page 7, for operating conditions.
Characteristic
Symbol
Min
Max
Unit
Notes
Input high voltage (all inputs except SYSCLK)
V
IH
2.0
–
V
1,2
Input low voltage (all inputs except SYSCLK)
V
IL
–
0.8
V
SYSCLK input high voltage
CV
IH
2.4
–
V
1, 4
SYSCLK input low voltage
CV
IL
–
0.4
V
4
Input leakage current, V
IN
= OV
DD
I
IN
–
20
μ
A
1,2
Hi-Z (off state) leakage current, Vin = OV
DD
I
TSI
–
20
μ
A
1,2
Output high voltage, I
OH
= –6mA
V
OH
2.4
–
V
Output low voltage, I
OL
= 6mA
V
OL
–
0.4
V
Capacitance, V
IN
=0 V, f = 1MHz
C
IN
–
5.0
pF
2,3
Note:
1. For 60x bus signals, the reference is OV
DD
, while L2OV
DD
is the reference for the L2 bus signals.
2. Excludes test signals LSSD_MODE, L1_TSTCLK, L2_TSTCLK, and IEEE 1149.1 signals.
3. Capacitance values are guaranteed by design and characterization, and are not tested.
4. SYSCLK input high and low voltage: I/O timings are measured using a “rail to rail” SYSCLK; I/O timing may be less favorable if SYSCLK does not travel
from GND to OV
DD.
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