參數(shù)資料
型號： IBM2017M016
元件分類： 放大器
英文描述： 1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封裝： LGA-16
文件頁數(shù)： 1/7頁
文件大小： 162K
代理商： IBM2017M016
IBM2017M016
Datasheet
Advance
SiGe BiCMOS CDMA Power Amplifier
November 14, 2001
Page 1 of 7
Features
IS-95/PCS operation in 1850-1910 MHz band
50
Matched Module
+28.5dBm output power
Passes industry standard VSWR ruggedness
test.
32% Power Added Efficiency (PAE)
Single power supply (no reference voltage
required)
On-chip logic-controlled power shutdown
Small-outline, low profile, 6x6mm, 16-lead LGA
module
Description
The IBM2017M016 CDMA Power Amplifier is a
highly integrated module with a single band, three-
stage device fabricated using IBM’s silicon-germa-
nium (SiGe) BiCMOS technology for high efficiency
in wireless handset applications. The power ampli-
fier (PA) is optimized for Code Division Multiple
Access (CDMA) operation in compliance with IS-95
standards
Advanced on-chip biasing technology enables
optimum CDMA performance and eliminates the
need for external reference voltages. An integrated
power down function extends battery life. On-chip
VSWR protection allows the PA to pass industry-
standard ruggedness tests at full RF drive (+30dBm
output) with load VSWR’s exceeding 10:1 at V
CC
=
5V.
The PA is available in a 16-lead, 6x6mm, low profile
module. The use of internal impedance matching
within the module results in optimal operating char-
acteristics with a small footprint.
Ordering Information
To order samples of the PA or a demonstration
board, contact an IBM sales representative or
distributor. Regional contact information is located
on the IBM Microelectronics Division website at:
Note:
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