- 您現在的位置：買賣IC網 > PDF目錄379205 > IBM13V25649AN (IBM Microeletronics) 256K x 64 SGRAM SO DIMM（Small Outline Dual In-line Memory Modules）(256K x 64 144腳小外形雙列直插同步圖形RAM模塊) PDF資料下載
參數資料
| 型號： | IBM13V25649AN |
| 廠商： | IBM Microeletronics |
| 英文描述： | 256K x 64 SGRAM SO DIMM（Small Outline Dual In-line Memory Modules）(256K x 64 144腳小外形雙列直插同步圖形RAM模塊) |
| 中文描述： | 256K × 64 SGRAM蘇內存（小外形雙列直插式內存模塊）（256K × 64 144腳小外形雙列直插同步圖形內存模塊） |
| 文件頁數： | 8/14頁 |
| 文件大?。?/td> | 224K |
| 代理商： | IBM13V25649AN |
IBM13V25649AN IBM13V51649AN
256K/512K x 64 SGRAM SO DIMM
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 8 of 14
88H4121.E24358
Revised 1/98
I
CC
Specifications
(0
°
C
≤
T
A
≤
70
°
C; V
CC
/V
CCQ
= 3.3V 0.3V)
Symbol
Parameter
Test Condition
CAS
Latency
Maximum
Maximum
Unit
Notes
256Kx64
512Kx64
-7R5
-10
-7R5
-10
I
CC1
Operating Current
Burst Length = 1
tRC
≥
tRC(Min)
t
CK
≥
t
CK
(Min)
I
O= 0mA
3
450
370
550
470
mA
1, 5
2
420
350
520
450
I
CC2
P
Precharge Standby Current
in Power Down Mode
CKE
≤
VIL(Max) t
CK
=15ns
6
6
12
12
mA
1, 5
I
CC2
PS
CKE
≤
VIL(Max) t
CK
= Infinity
6
6
12
12
I
CC2
N
Precharge Standby Current
in Non Power Down Mode
CKE
≥
VIH(Min) t
CK
=15ns
Input change every 30ns
90
90
190
190
mA
6
I
CC2
NS
CKE
≥
VIH(Min) t
CK
=Infinity
No input change
40
40
90
90
7
I
CC3
P
Active Standby Current in
Power Down Mode
CKE
≤
VIL(Max) t
CK
=15ns
6
6
12
12
mA
I
CC3
PS
CKE
≤
VIL(Max) t
CK
= Infinity
6
6
12
12
I
CC3
N
Active Standby Current in
Non Power Down Mode
CKE
≥
VIH(Min) t
CK
=15ns
Input change every 30ns
100
100
200
200
mA
I
CC3
NS
CKE
≥
VIH(Min) t
CK
=Infinity
No input change
50
50
100
100
I
CC4
Operating Current
(Burst Mode)
tRC =Infinity
I
O= 0mA
Dual Bank Interleave
Continuous
3
400
380
500
480
mA
2, 8
2
300
280
400
380
I
CC5
Auto Refresh Current
tRC
≥
tRC(Min)
3
420
370
840
740
mA
3, 4
2
340
310
680
610
I
CC6
Self Refresh Current
CKE = 0.2V
6
6
12
12
mA
4, 9
1. Measured with outputs open, inputs 0-3V.
2. Assumes minimum column address update cycle.
3. Refresh period is 16ms.
4. Assumes all SGRAMs in Self-refresh.
5. One bank operating; if 512Kx64, one bank in active standby, non-power down mode.
6. One bank precharge; if 512Kx64, one bank in active standby, non-power down mode.
7. One bank precharge; if 512Kx64, one bank in active standby, no input change.
8. One bank in burst; if 512Kx64, one bank in active standby.
9. Refresh period is 128ms.
相關PDF資料 |
PDF描述 |
|---|---|
| IBM13V51649AN | 512K x 64 SGRAM SO DIMM（Small Outline Dual In-line Memory Modules）(512K x 64 144腳小外形雙列直插同步圖形RAM模塊) |
| IBM2520L8767 | IBM Asynchronous Transfer Mode Processor for ATM Resources(IBM異步轉換模式 ATM資源管理微處理器) |
| IBM25CPC710AB3A100 | IBM Dual Bridge and Memory Controller(IBM雙橋和存儲器控制器（連接帶同步動態(tài)RAM存儲器的Power PC 60x總線和兩個PCI端口）) |
| IBM3206K0424 | IBM Processor for Network Resources(異步轉換模式（ATM）32位微處理器（用于網絡資源管理）) |
| IBM3209K3114 | IBM Packet Routing Switch Serial Interface Converter(IBM封裝路線選擇開關串行接口轉換器) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IBM14H5481 | 制造商:AVED Memory Products 功能描述: |
| IBM14H5540 | 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述: |
| IBM17R8251 | 制造商:AVED Memory Products 功能描述: |
| IBM17R8252 | 制造商:AVED Memory Products 功能描述: |
| IBM1805T | 制造商:Schneider Electric 功能描述:IBM1805T |
發(fā)布緊急采購，3分鐘左右您將得到回復。