參數(shù)資料
型號(hào)： IBM0117405M
廠商： IBM Microeletronics
英文描述： 4M x 4 11/11 EDO DRAM(16M位 動(dòng)態(tài)RAM（超頁(yè)面模式讀寫(xiě)并帶22條地址線，其中11條為行地址選通，11條為列地址選通）)
中文描述： 4米× 4 11/11 EDO公司的DRAM（1,600位動(dòng)態(tài)隨機(jī)存儲(chǔ)器（超頁(yè)面模式讀寫(xiě)并帶22條地址線，其中11條為行地址選通，11條為列地址選通））
文件頁(yè)數(shù)： 1/31頁(yè)
文件大?。?/td> 545K
代理商： IBM0117405M
IBM0117405
IBM0117405B IBM0117405P
4M x 4 11/11 EDO DRAM
IBM0117405M
28H4726
SA14-4228-05
Revised 4/97
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 31
Features
4,194,304 word by 4 bit organization
Single 3.3V
±
0.3V or 5.0V
±
0.5V power supply
Standard Power (SP) and Low Power (LP)
2048 Refresh Cycles
- 32 ms Refresh Rate (SP version)
- 128 ms Refresh Rate (LP version)
High Performance:
-50
-60
Units
t
RAC
RAS Access Time
50
60
ns
t
CAC
CAS Access Time
13
15
ns
t
AA
Column Address Access Time
25
30
ns
t
RC
Cycle Time
84
104
ns
t
HPC
EDO (Hyper Page) Mode Cycle Time
20
25
ns
Low Power Dissipation
- Active (max) - 75 mA / 60 mA
- Standby: TTL Inputs (max) - 1.0 mA
- Standby: CMOS Inputs (max)
- 1.0 mA (SP version)
- 0.1 mA (LP version)
- Self Refresh (LP version only)
- 200
μ
A (3.3 Volt)
- 300
μ
A (5.0 Volt)
Extended Data Out (Hyper Page) Mode
Read-Modify-Write
RAS Only and CAS before RAS Refresh
Hidden Refresh
Package: SOJ 26/24 (300mil x 675mil)
TSOP-26/24 (300mil x 675mil)
Description
The IBM0117405 is a dynamic RAM organized
4,194,304 words by 4 bits, which has a very low
“sleep mode” power consumption option. These
devices are fabricated in IBM’s advanced 0.5
μ
m
CMOS silicon gate process technology. The circuit
and process have been carefully designed to pro-
vide high performance, low power dissipation, and
high reliability. The devices operate with a single
3.3V
±
0.3V or 5.0V
±
0.5V power supply. The 22
addresses required to access any bit of data are
multiplexed (11 are strobed with RAS, 11 are
strobed with CAS).
Pin Assignments
(Top View)
26
25
24
23
22
21
19
18
17
16
15
14
Vss
I/O3
I/O2
CAS
OE
A9
A8
A7
A6
A5
A4
Vss
1
2
3
4
5
6
8
9
10
11
12
13
Vcc
I/O0
I/O1
WE
RAS
NC
A10
A0
A1
A2
A3
Vcc
Pin Description
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Read/Write Input
A0 - A10
Address Inputs
OE
Output Enable
I/O0 - I/O3
Data Input/Output
V
CC
Power (+3.3V or +5.0V)
V
SS
Ground
IBM01174054M x 411/11, 5.0V, EDOMMDD64DSU-001012331. IBM0117405P4M x 411/11, 3.3V, EDO, LP, SRMMDD64DSU-001012331. IBM0117405M4M x 411/11, 5.0V, EDO, LP, SRMMDD64DSU-001012331. IBM0117405B4M x 411/11, 3.3V, EDOMMDD64DSU-001012331.
Discontinued (9/98 - last order; 3/99 last ship)
相關(guān)PDF資料
PDF描述
IBM0117405P 4M x 4 11/11 EDO DRAM(16M位 動(dòng)態(tài)RAM（超頁(yè)面模式讀寫(xiě)并帶22條地址線，其中11條為行地址選通，11條為列地址選通）)
IBM0117805 2M x 8 11/10 EDO DRAM(16M位 動(dòng)態(tài)RAM（超頁(yè)面模式讀寫(xiě)并帶21條地址線，其中11條為行地址選通，10條為列地址選通）)
IBM0117805B 2M x 8 11/10 EDO DRAM(16M位 動(dòng)態(tài)RAM（超頁(yè)面模式讀寫(xiě)并帶21條地址線，其中11條為行地址選通，10條為列地址選通）)
IBM0117805M 2M x 8 11/10 EDO DRAM(16M位 動(dòng)態(tài)RAM（超頁(yè)面模式讀寫(xiě)并帶21條地址線，其中11條為行地址選通，10條為列地址選通）)
IBM0117805P 2M x 8 11/10 EDO DRAM(16M位 動(dòng)態(tài)RAM（超頁(yè)面模式讀寫(xiě)并帶21條地址線，其中11條為行地址選通，10條為列地址選通）)
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