
7-129
Notes:
1. No external baluns are required.
2. Good heatsinking required on Pin 3 for
specified performance.
Figure 2. IAM-82008 Typical Biasing Configuration.
Figure 5. RF, LO, and IF Port VSWR
vs. Frequency, T
A
= 25
°
C, V
CC
= 10 V.
Figure 6. Typical Conversion Gain, IF
P
, and I
Current vs. Case
Temperature, T
= 25
°
C, V
= 10 V,
RF: -20 dBm at 2 GHz, LO: 0 dBm at
1.75 GHz.
Figure 3. Typical Conversion Gain, IF
P
, and I
Current vs. V
Bias
Voltage, T
= 25
°
C, RF: -20 dBm at 2
GHz, LO: 0 dBm at 1.75 GHz.
Figure 4. Typical RF to IF Conversion
Gain vs. IF Frequency, T
= 25
°
C, V
CC
= 10 V, LO: 0 dBm at 2 GHz.
Figure 7. Typical RF to IF Conversion
Gain vs. LO Power, T
= 25
°
C, V
= 10
V, RF: -10 dBm at 2 GHz, LO: 0 dBm at
1.75 GHz.
Figure 8. Typical RF Feedthrough
Relative to IF Carrier, LO to RF and
LO to IF Leakage vs. Frequency, T
A
=
25
°
C, V
= 10 V, RF: -20 dBm at
2 GHz, LO: 0 dBm at 1.75 GHz.
Figure 9. Harmonic Intermodulation
Suppression (dB Below Desired
Output) RF at 1 GHz, LO at 0.752
GHz, IF at 0.248 GHz.
0
–
21
40
73
>75
>75
1
12
0
51
60
>75
>75
2
6
22
41
>75
>75
>75
3
24
18
40
74
>75
>75
4
22
33
52
75
>75
>75
5
41
36
55
>75
>75
>75
0
1
2
3
4
5
HARMONIC RF ORDER
Xmn = Pif – P(m*rf-n*lo)
H
20
20
15
15
10
10
5
5
0
0
100
75
50
25
0
0
4
8
12
16
20
I
G
C
G
C
I
CC
P
1dB
I
C
V (V)
20
12
.01
0.1
2.0
IF FREQUENCY, RF-LO (GHz)
16
0
1.0
8
4
LO = 2 GHz
G
C
HIGH SIDE LO =
LOW SIDE LO =
4:1
3:1
2:1
1:1
0.1
1.0
10
FREQUENCY (GHz)
V
LO
IF
RF
RF
LO
IF
15
20
15
10
5
0
-5
10
5
0
80
70
60
50
40
-55
-25
25
85
125
0
TEMPERATURE (°C)
I
G
C
I
C
G
C
I
CC
1dB
P
16
14
12
10
-10
-5
0
5
10
LO POWER (dBm)
G
C
0
-10
-20
-30
-40
-50
-60
0.1
1.0
10
FREQUENCY (GHz)
R
L
RF to IF
LO to IF
LO to RF
LO to RF
RF to IF
LO to IF
1
2
3
4
5
6
8
7
OPTIONAL LOW
FREQUENCIES
RF GROUND
V = 10 V
OPTIONAL LOW
FREQUENCIES
LO GROUND
LO INPUT
IF OUTPUT
V = 0 V
RF INPUT
PIN 3 IS ALSO
HEATSINK CONTACT
C
BLOCK
C
BLOCK
C
BLOCK
C
BLOCK
C
BLOCK