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參數(shù)資料
| 型號(hào)： | I772 |
| 廠商： | DC Components Co., Ltd. |
| 英文描述： | TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 技術(shù)參數(shù)的PNP外延平面晶體管 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | I772 |
I772
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Pinning
1 = Base
2 = Collector
3 = Emitter
Description
Designed for use in output stage of 10W audio
amplifier, voltage regulator, DC-DC converter,
and relay driver.
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation(T
C
=25
o
C)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
D
T
J
T
STG
Rating
-40
-30
-5
-3
-7
-600
10
+150
-55 to +150
Unit
V
V
V
A
A
mA
W
o
C
o
C
Absolute Maximum Ratings
(T
A
=25
o
C)
TO-251
Dimensions in inches and (millimeters)
.284(7.20)
.268(6.80)
.217(5.50)
.205(5.20)
.268(6.80)
.252(6.40)
(.256
(.035
(.032
(.181
.095(2.40)
.087(2.20)
.059(1.50)
.035(0.90)
.024(0.60)
.018(0.45)
.022(0.55)
.018(0.45)
.063(1.60)
.055(1.40)
1
2
3
2
Characteristic
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
f
T
C
ob
Min
-40
-30
-5
-
-
-
-
30
100
-
-
Typ
-
-
-
-
-
-0.3
-1
-
-
80
55
Max
-
-
-
-1
-1
-0.5
-2
-
500
-
-
Unit
V
V
V
μ
A
μ
A
V
V
-
-
MHz
pF
Test Conditions
I
C
=-100
μ
A, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10
μ
A, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-3V, I
C
=0
I
C
=-2A, I
B
=-0.2A
I
C
=-2A, I
B
=-0.2A
I
C
=-20mA, V
CE
=-2V
I
C
=-1A, V
CE
=-2V
I
C
=-0.1A, V
CE
=-5V, f=100MHz
V
CB
=-10V, f=1MHz
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(
1)
Base-Emitter Saturation Voltage
(
1)
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
380
μ
s, Duty Cycle
2%
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
Rank
Range
Q
P
E
100~200
160~320
250~500
Classification of h
FE2
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