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參數(shù)資料
| 型號(hào)： | HZS11L |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Epitaxial Planar Zener Diode for Low Noise Application(低噪音應(yīng)用的平面外延齊納二極管) |
| 中文描述： | 硅外延平面齊納二極管低噪聲應(yīng)用（低噪音應(yīng)用的平面外延齊納二極管） |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 33K |
| 代理商： | HZS11L |
HZS-L Series
Silicon Epitaxial Planar Zener Diode for Low Noise Application
ADE-208-121A(Z)
Rev 1
Features
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
stabilized power supply, etc.
Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
Ordering Information
Type No.
Mark
Package Code
HZS-L Series
Type No.
MHD
Outline
1. Cathode
2. Anode
Cathode band
Type No.
1
2
B
2
7
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| HZS15L | Silicon Epitaxial Planar Zener Diode for Low Noise Application(低噪音應(yīng)用的平面外延齊納二極管) |
| HZS20L | Silicon Epitaxial Planar Zener Diode for Low Noise Application(低噪音應(yīng)用的平面外延齊納二極管) |
| HZS22L | Silicon Epitaxial Planar Zener Diode for Low Noise Application(低噪音應(yīng)用的平面外延齊納二極管) |
| HZS27L | Silicon Epitaxial Planar Zener Diode for Low Noise Application(低噪音應(yīng)用的平面外延齊納二極管) |
| HZS30L | Silicon Epitaxial Planar Zener Diode for Low Noise Application(低噪音應(yīng)用的平面外延齊納二極管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HZS11L1 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Low Noise Application |
| HZS11L2 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Low Noise Application |
| HZS11L3 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Low Noise Application |
| HZS11LA1 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Low Noise Application |
| HZS11LA2 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Low Noise Application |
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