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| 型號(hào)： | HZB6.8MWA |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | HZB6.8MWA |
HZB6.8MWA
Rev.1, Nov. 2001, page 2 of 5
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Value
Unit
Power dissipation
Pd
*
200
mW
°
C
°
C
Junction temperature
Tj
150
55 to +150
Storage temperature
Note
:
Two device total, See Fig.2.
Tstg
Electrical Characteristics *
1
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Zener voltage
V
Z
I
R
C
6.47
30
7.00
V
μ
A
pF
kV
I
Z
= 5 mA, 40 ms pulse
V
R
= 3.5 V
V
R
= 0 V, f = 1 MHz
I
Z
= 5 mA
C = 150 pF, R = 330
, Both forward
and reverse direction 10 pulse
Reverse current
2
Capacitance
130
Dynamic resistance
r
d
30
ESD-Capability
*
2,
*
3
Notes
:
1. Per one device.
2. Failure criterion ; I
R
> 2
μ
A at V
R
= 3.5 V.
3. Between cathode and anode
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