參數(shù)資料
型號: HYS72V8200GU-10
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module
中文描述: 8M X 72 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
封裝: DIMM-168
文件頁數(shù): 3/17頁
文件大?。?/td> 84K
代理商: HYS72V8200GU-10
HYS 64(72)V8200/16220GU-8/-10
SDRAM Modules
Semiconductor Group
3
1998-08-01
Pin Names
A0 - A11
Address Inputs
CLK0 - CLK3
Clock Input
BA0, BA1
Bank Selects
DQMB0 -
DQMB7
Data Mask
DQ0 - DQ63
Data Input/Output
Check Bits (
×
72
organization only)
CS0 - CS3
V
CC
Chip Select
CB0 - CB7
Power (+ 3.3 Volt)
RAS
Row Address Strobe
V
SS
SCL
Ground
CAS
Column Address Strobe
Clock for Presence Detect
WE
Read/Write Input
SDA
Serial Data Out for Presence Detect
CKE0, CKE1
Clock Enable
N.C.
No Connection
Address Format
Part Number
Rows
Columns Bank
Select
Refresh
Period
Interval
8M
×
64
8M
×
72
16M
×
64 HYS 64V16220GU
16M
×
72 HYS 72V16220GU
HYS 64V8200GU
12
9
2
4k
64 ms
15.6
μ
s
15.6
μ
s
15.6
μ
s
15.6
μ
s
HYS 72V8200GU
12
9
2
4k
64 ms
12
9
2
4k
64 ms
12
9
2
4k
64 ms
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