參數(shù)資料
型號(hào): HYS72V16300GR-75-E
廠商: INFINEON TECHNOLOGIES AG
英文描述: PC133 Registered SDRAM-Modules
中文描述: PC133的SDRAM的注冊(cè)模塊
文件頁數(shù): 9/22頁
文件大?。?/td> 593K
代理商: HYS72V16300GR-75-E
HYS 72Vxx3xxGR
PC133 Registered SDRAM-Modules
INFINEON Technologies
9
2002-07-18
Operating Currents per SDRAM Component
T
A
= 0 to 70
°
C
1)
,
V
DD
= 3.3 V
±
0.3 V
Parameter
Test Condition Symbol 64
Mb
128
Mb
256
Mb
512
Mb
Unit Note
max.
Operating current
t
RC
=
t
RC(MIN.)
,
t
CK
=
t
CK(MIN.)
Outputsopen, Burst Length = 4,
CL = 3. All banks operated in
random access, all banks
operated in ping-pong manner
to maximize gapless data
access
I
CC1
110
160
270
tbd.
mA
2)
Precharge stand-by current
in Power Down Mode
CS =
V
IH(MIN.)
, CKE
V
IL(MAX.)
Precharge Stand-by Current
in Non-Power Down Mode
t
CK
= min.
I
CC2P
2
1.5
2
tbd.
mA
2)
CS =
V
IH (MIN.)
, CKE
V
IH(MIN.)
No operating current
t
CK
= min.
I
CC2N
40
40
25
tbd.
mA
2)
t
= min., CS =
V
,
active state (max. 4 banks)
CKE
V
IH(MIN.)
CKE
V
IL(MAX.)
I
CC3N
I
CC3P
50
50
50
tbd.
mA
2)
8
10
10
tbd.
mA
2)
Burst operating current
t
= min.,
Read command cycling
I
CC4
70
100
170
tbd.
mA
2), 3)
Auto refresh current
t
CK
= min.,
Auto Refresh command cycling
I
CC5
140
230
240
tbd.
mA
2)
Self refresh current
Self Refresh Mode,CKE = 0.2 V
I
CC6
1
1.5
2.5
tbd.
mA
2)
相關(guān)PDF資料
PDF描述
HYS72V64300GR-75-C2 PC133 Registered SDRAM-Modules
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HYS72V16300GR PC133 Registered SDRAM-Modules
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