參數(shù)資料
型號: HYS72T1G242EP-3.7-C
廠商: QIMONDA AG
元件分類: DRAM
英文描述: 240-Pin Dual Die Registered DDR2 SDRAM Modules
中文描述: 1G X 72 DDR DRAM MODULE, 0.7 ns, DMA240
封裝: GREEN, RDIMM-240
文件頁數(shù): 16/43頁
文件大?。?/td> 1309K
代理商: HYS72T1G242EP-3.7-C
Internet Data Sheet
Rev. 1.0, 2007-07
07242007-LR08-OZC0
16
HYS72T1G242EP–[25F/2.5/3/3S/3.7]–C
Registerd DDR2 SDRAM Module
3.3
Timing Characteristics
This chapter describes the timing characteristics.
3.3.1
Speed Grade Definitions
All Speed grades faster than DDR2-400B comply with DDR2-400B timing specifications(
t
CK
= 5ns with
t
RAS
= 40ns).
Speed Grade Definitions:
Table 12
for DDR2–800E ,
Table 13
for DDR2–667D,
Table 14
for DDR2–533C
TABLE 12
Speed Grade Definition Speed Bins for DDR2–800
TABLE 13
Speed Grade Definition Speed Bins for DDR2–667
Speed Grade
DDR2–800D
DDR2–800E
Unit
Note
QAG Sort Name
–2.5F
–2.5
CAS-RCD-RP latencies
5–5–5
6–6–6
t
CK
Parameter
Symbol
Min.
Max.
Min.
Max.
Clock Frequency
@ CL = 3
@ CL = 4
@ CL = 5
@ CL = 6
t
CK
t
CK
t
CK
t
CK
t
RAS
t
RC
t
RCD
t
RP
5
3.75
2.5
2.5
45
57.5
12.5
12.5
8
8
8
8
70000
5
3.75
3
2.5
45
60
15
15
8
8
8
8
70000
ns
ns
ns
ns
ns
ns
ns
ns
1)2)3)4)
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal
OCD drive strength (EMRS(1) A1 = 0)
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode.
3) Inputs are not recognized as valid until
V
REF
stabilizes. During the period before
V
REF
stabilizes, CKE = 0.2 x
V
DDQ
is recognized as low.
4) The output timing reference voltage level is
V
TT
.
5)
t
RAS.MAX
is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x
t
REFI
.
1)2)3)4)
1)2)3)4)
1)2)3)4)
Row Active Time
Row Cycle Time
RAS-CAS-Delay
Row Precharge Time
1)2)3)4)5)
1)2)3)4)
1)2)3)4)
1)2)3)4)
Speed Grade
DDR2–667C
DDR2–667D
Unit
Notes
QAG Sort Name
–3
–3S
CAS-RCD-RP latencies
4–4–4
5–5–5
t
CK
Parameter
Symbol
Min.
Max.
Min.
Max.
Clock Frequency
@ CL = 3
@ CL = 4
@ CL = 5
t
CK
t
CK
t
CK
5
3
3
8
8
8
5
3.75
3
8
8
8
ns
ns
ns
1)2)3)4)
1)2)3)4)
1)2)3)4)
相關(guān)PDF資料
PDF描述
HYS72T1G242EP-3-C 240-Pin Dual Die Registered DDR2 SDRAM Modules
HYS72T1G242EP-3S-C 240-Pin Dual Die Registered DDR2 SDRAM Modules
HYS72T256000ER 240-Pin Registered DDR2 SDRAM Modules
HYS72T256000ER-3.7-B 240-Pin Registered DDR2 SDRAM Modules
HYS72T256000ER-5-B 240-Pin Registered DDR2 SDRAM Modules
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYS72T1G242EP-3-C 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin Dual Die Registered DDR2 SDRAM Modules
HYS72T1G242EP-3S-C 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin Dual Die Registered DDR2 SDRAM Modules
HYS72T256000ER 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin Registered DDR2 SDRAM Modules
HYS72T256000ER-3.7-B 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin Registered DDR2 SDRAM Modules
HYS72T256000ER-5-B 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin Registered DDR2 SDRAM Modules