Internet Data Sheet
Rev. 1.0, 2007-04
04242007-NQ2Z-YM3O
14
HYS72T1G042ER–5–B
Registerd DDR2 SDRAM Module
3.2
DC Operating Conditions
This chapter contains the DC operating conditions tables.
TABLE 10
Operating Conditions
TABLE 11
Supply Voltage Levels and DC Operating Conditions
Parameter
Symbol
Values
Unit
Note
Min.
Max.
Operating temperature (ambient)
DRAM Case Temperature
Storage Temperature
Barometric Pressure (operating & storage)
Operating Humidity (relative)
T
OPR
T
CASE
T
STG
P
Bar
H
OPR
0
0
– 50
+69
10
+65
+95
+100
+105
90
°
C
°
C
°
C
kPa
%
1)2)3)4)
1) DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs.
2) Within the DRAM Component Case Temperature Range all DRAM specifications will be supported
3) Above 85 °C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to
t
REFI
= 3.9
μ
s
4) When operating this product in the 85 °C to 95 °C
T
CASE
temperature range, the High Temperature Self Refresh has to be enabled by
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of
I
DD6
by approximately 50 %.
5) Up to 3000 m.
5)
Parameter
Symbol
Values
Unit
Note
Min.
Typ.
Max.
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
SPD Supply Voltage
DC Input Logic High
DC Input Logic Low
In / Output Leakage Current
V
DD
V
DDQ
V
REF
V
DDSPD
V
IH(DC)
V
IL (DC
)
I
L
1.7
1.7
0.49
×
V
DDQ
1.7
V
REF
+ 0.125
– 0.30
– 5
1.8
1.8
0.5
×
V
DDQ
—
—
—
—
1.9
1.9
0.51
×
V
DDQ
3.6
V
DDQ
+ 0.3
V
REF
– 0.125
5
V
V
V
V
V
V
μ
A
1)
1) Under all conditions,
V
DDQ
must be less than or equal to
V
DD
2) Peak to peak AC noise on
V
REF
may not exceed ± 2 %
V
REF
(DC).
V
REF
is also expected to track noise in
V
DDQ
.
3) Input voltage for any connector pin under test of 0 V
≤
V
IN
≤
V
DDQ
+ 0.3 V; all other pins at 0 V. Current is per pin
2)
3)
