參數(shù)資料
型號(hào): HYS72T128420HFN-3.7-B
廠(chǎng)商: QIMONDA AG
元件分類(lèi): DRAM
英文描述: 240-Pin Fully-Buffered DDR2 SDRAM Modules
中文描述: 128M X 72 DDR DRAM MODULE, DMA240
封裝: GREEN, DIMM-240
文件頁(yè)數(shù): 16/42頁(yè)
文件大小: 1262K
代理商: HYS72T128420HFN-3.7-B
Internet Data Sheet
Rev. 1.1, 2006-11
09142006-87TL-4SLW
16
HYS72T[64/128/256]4[00/20]HFN–[3S/3.7]–B
4
Electrical Characteristics
4.1
Operating Conditions
TABLE 8
Absolute Maximum Ratings
Attention: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
TABLE 9
Operating Temperature Range
Symbol
Parameter
Rating
Unit
Note
Min.
Max.
V
DD
V
CC
V
DDQ
V
DDL
V
IN
,
V
OUT
T
STG
V
TT
Voltage on
V
DD
pin relative to
V
SS
Voltage on
V
CC
pin relative to
V
SS
Voltage on
V
DDQ
pin relative to
V
SS
Voltage on
V
DDL
pin relative to
V
SS
Voltage on any pin relative to
V
SS
Storage Temperature
Voltage on
V
TT
pin relative to
V
SS
–0.5
–0,3
–0.5
–0.5
–0.3
–55
–0.5
+2.3
1.75
+2.3
+2.3
+1.75
+100
2.3
V
V
V
V
V
°C
V
1)
1) When
V
DD
and
V
DDQ
and
V
DDL
are less than 500 mV;
V
REF
may be equal to or less than 300 mV.
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
1)2)
1)2)
1)
1)2)
Symbol
Parameter
Values
Unit
Note
Min.
Max.
T
CASE
T
CASE
DRAM Component Case Temperature Range
AMB Component Case Temperature Range
0
0
+95
+110
°C
°C
1)2)3)
1) Within the DRAM Component Case Temperature range all DRAM specification will be supported.
2) Self-Refresh period is hard-coded in the DRAMs and therefore it is imperative that the system ensures the DRAM is below 85 °C case
temperature before initiating self-refresh operation.
3) Above 85 °C DRAM case temperature the Auto-Refresh command interval has to be reduced to tREFI = 3.9 μs.
1)
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