參數(shù)資料
型號(hào)： HYS72D128300GBR-5-B
廠商： INFINEON TECHNOLOGIES AG
英文描述： Category 6 Termination Kit; Contents Of Kit:GigaBIX? mount, color-coded GigaBIX? connectors, wire guards, designation strips and labels, Velcro tie and installation guide RoHS Compliant: Yes
中文描述： 184針注冊(cè)雙倍數(shù)據(jù)速率SDRAM模塊
文件頁(yè)數(shù)： 21/45頁(yè)
文件大?。?/td> 1208K
代理商： HYS72D128300GBR-5-B
Registered Double Data Rate SDRAM Module
Electrical Characteristics
21
Rev. 0.5, 2003-12
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B
Data Sheet
Active to Precharge command
Active to Active/Auto-refresh command
period
Auto-refresh to Active/Auto-refresh
command period
Active to Read or Write delay
Precharge command period
Active to Autoprecharge delay
Active bank A to Active bank B command
Write recovery time
Auto precharge write recovery + precharge
time
Internal write to read command delay
Exit self-refresh to non-read command
Exit self-refresh to read command
Average Periodic Refresh Interval
t
RAS
t
RC
40
55
70E+3
—
42
60
70E+3
—
ns
ns
2)3)4)5)
2)3)4)5)
t
RFC
65
—
72
—
ns
2)3)4)5)
t
RCD
t
RP
t
RAP
t
RRD
t
WR
t
DAL
15
15
15
10
15
—
—
—
—
—
18
18
18
12
15
—
—
—
—
—
ns
ns
ns
ns
ns
t
CK
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
(
t
WR
/
t
CK
) +
(
t
RP
/
t
CK
)
—
75
200
—
(
t
WR
/
t
CK
) +
(
t
RP
/
t
CK
)
—
75
200
—
2)3)4)5)11)
t
WTR
t
XSNR
t
XSRD
t
REFI
1
1
t
CK
ns
t
CK
μ
s
2)3)4)5)
—
—
7.8
—
—
7.8
2)3)4)5)
2)3)4)5)
2)3)4)5)12)
1) 0
°
C
≤
T
A
≤
70
°
C
; V
DDQ
= 2.5 V
±
0.2 V,
V
DD
= +2.5 V
±
0.2 V (DDR333);
V
DDQ
= 2.6 V
±
0.1 V,
V
DD
= +2.6 V
±
0.1 V
(DDR400)
2) Input slew rate
≥
1 V/ns for DDR400, DDR333
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference
level for signals other than CK/CK, is
V
REF
. CK/CK slew rate are
≥
1.0 V/ns.
4) Inputs are not recognized as valid until
V
REF
stabilizes.
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is
V
TT
.
6) These parameters guarantee device timing, but they are not necessarily tested on each device.
7)
t
HZ
and
t
LZ
transitions occur in the same access time windows as valid data transitions. These parameters are not referred
to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
8) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge.
A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were
previously in progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress,
DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on
t
DQSS
.
9) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but
system performance (bus turnaround) degrades accordingly.
10) Fast slew rate
≥
1.0 V/ns , slow slew rate
≥
0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns,
measured between
V
OH(ac)
and
V
OL(ac)
.
11) For each of the terms, if not already an integer, round to the next highest integer.
t
CK
is equal to the actual system clock
cycle time.
12) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.
Table 12
Parameter
AC Timing - Absolute Specifications –6/–5
(cont’d)
Symbol
–5
–6
Unit
Note/ Test
Condition
1)
DDR400B
Min.
DDR333
Min.
Max.
Max.
相關(guān)PDF資料
PDF描述
HYS72D128300GBR-6-B Category 6 Termination Kit; Contents Of Kit:GigaBIX? mount, color-coded GigaBIX? connectors, wire guards, designation strips and labels, Velcro tie and installation guide RoHS Compliant: Yes
HYS72D128300GBR-7-B Connector Wall Plate; Color:Almond; Leaded Process Compatible:Yes; No. of Ports:1 RoHS Compliant: Yes
HYS72D256320GBR-6-B Aluminum Polymer Radial Lead Capacitor; Capacitance: 560uF; Voltage: 4V; Case Size: 8x9 mm; Packaging: Bulk
HYS72D256320GBR-7-B Aluminum Polymer Radial Lead Capacitor; Capacitance: 680uF; Voltage: 4V; Case Size: 8x12 mm; Packaging: Bulk
HYS72D256320GBR-5-B 184-Pin Registered Double Data Rate SDRAM Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYS72D128300GBR-6-B 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:184 - Pin Registered Double-Data-Rate SDRAM Module
HYS72D128300GBR-7-B 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:184 - Pin Registered Double-Data-Rate SDRAM Module
HYS72D128300HBR-5-B 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:184 - Pin Registered Double-Data-Rate SDRAM Module
HYS72D128300HBR-5-C 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:184-Pin Registered Double-Data-Rate SDRAM Module
HYS72D128300HBR-6-B 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:184 - Pin Registered Double-Data-Rate SDRAM Module
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