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參數(shù)資料
| 型號： | HYS64V64220GU-7.5-D |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | SDRAM|64MX64|CMOS|DIMM|168PIN|PLASTIC |
| 中文描述： | 內存| 64MX64 |的CMOS |內存| 168線|塑料 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 456K |
| 代理商： | HYS64V64220GU-7.5-D |
HYS64V64220GBDL-7/7.5/8-D
144 pin SO-DIMM SDRAM Modules
Infineon Technologies
5
2002-08-06
Absolute Maximum Ratings
Parameter
DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
= 3.3 V
±
0.3 V
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Symbol
Limit Values
Unit
min.
max.
Input / Output voltage relative to V
SS
Power supply voltage on V
DD
Storage temperature range
V
IN,
V
OUT
V
DD
T
STG
P
D
I
OS
– 1.0
4.6
V
– 1.0
4.6
V
-55
+125
o
C
Power dissipation
–
16
W
Data out current (short circuit)
–
50
mA
Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
Parameter
Symbol
Limit Values
Unit
min.
max.
Input high voltage
V
I
H
V
I
L
V
OH
V
OL
I
I
(L)
2.0
VDD+0.3
V
Input low voltage
– 0.5
0.8
V
Output high voltage (
I
OUT
= – 4.0 mA)
Output low voltage (
I
OUT
= 4.0 mA)
Input leakage current, any input
(0 V <
V
I
N
< 3.6 V, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
2.4
–
V
–
0.4
V
– 20
20
μ
A
I
O(L)
– 20
20
μ
A
Parameter
Symbol
Limit
Values
Unit
64M x 64
max.
Input capacitance (A0 to A11, BA0, BA1)
C
I
1
C
I
2
C
I
3
C
I
4
C
I
5
C
I
6
C
I
O
C
sc
C
sd
85
pF
Input capacitance (RAS, CAS, WE)
85
pF
Input Capacitance (CLK0, CLK1)
70
pF
Input capacitance (CS0, CS1)
60
pF
Input capacitance (DQMB0-DQMB7)
15
pF
Input capacitance (CKE0, CKE1)
50
pF
Input / Output capacitance (DQ0-DQ63)
18
pF
Input Capacitance (SCL,SA0-2)
8
pF
Input/Output Capacitance (SDA)
10
pF
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