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參數(shù)資料
| 型號： | HYS64V32300GU-8-C2 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules |
| 中文描述： | 3.3伏32M的x 64/72-Bit，256MB的內(nèi)存模塊168針腳無緩沖DIMM模塊 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 103K |
| 代理商： | HYS64V32300GU-8-C2 |
HYS 64/72V32300GU
SDRAM-Modules
INFINEON Technologies
6
9.01
Operating Currents per SDRAM Component
1)
T
A
= 0 to 70
o
C,
V
DD
= 3.3 V
±
0.3 V
Parameter
Test
Condition
Symbol
-7.5
-8
Unit Note
max.
Operating current
t
RC
=
t
RCMIN.
,
t
CK
=
t
CKMIN.
Outputs open, Burst Length = 4, CL = 3
All banks operated in random access,
all banks operated in ping-pong manner
to maximize gapless data access
–
I
CC1
230
170
mA
2)
Precharge stand-by current
in Power Down Mode
CS =
V
IH(MIN.)
, CKE
≤
V
IL(MAX.)
Precharge Stand-by Current
in Non-Power Down Mode
t
CK
= min.
I
CC2P
2
2
mA
2)
CS =
V
IH (MIN.)
, CKE
≥
V
IH(MIN.)
No operating current
t
CK
= min.
I
CC2N
40
30
mA
2)
t
= min., CS =
V
,
active state (max. 4 banks)
CKE
≥
V
IH(MIN.)
I
CC3N
CKE
≤
V
IL(MAX.)
I
CC3P
50
45
mA
2)
10
10
mA
2)
Burst operating current
t
= min.,
Read command cycling
–
I
CC4
150
100
mA
2), 3)
Auto refresh current
t
CK
= min.,
Auto Refresh command cycling
–
I
CC5
240
220
mA
2)
Self refresh current
Self Refresh Mode, CKE = 0.2 V
I
CC6
3
3
mA
2)
1. All values are shown per one SDRAM component.
2. These parameters depend on the cycle rate. These values are measured at 133 MHz operation frequency
for -7 & -7.5 and at 100 MHz for -8 modules.
Input signals are changed once during
t
, excepts for
I
and for stand-by currents when
t
= infinity.
3. These parameters are measured with continuous data stream during read access and all DQ toggling.
CL = 3 and BL = 4 are assumed and the data-out current is excluded.
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