參數(shù)資料
型號: HYS64V2100G
廠商: SIEMENS AG
英文描述: 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module
中文描述: 3.3V的200萬個64位SDRAM模塊3.3V的200萬× 72位SDRAM模塊
文件頁數(shù): 5/12頁
文件大?。?/td> 75K
代理商: HYS64V2100G
HYS64(72)V2100G(C)U-10
2M x 64/72 SDRAM-Module
Semiconductor Group
5
DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD,
V
DDQ
= 3.3 V
±
0.3 V
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input high voltage
V
I
H
V
I
L
V
OH
V
OL
I
I
(L)
2.0
Vcc+0.3
V
Input low voltage
Output high voltage (
I
OUT
= – 2.0 mA)
Output low voltage (
I
OUT
= 2.0 mA)
Input leakage current, any input
(0 V <
V
I
N
< 3.6 V, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V <
V
OUT
<
V
CC
)
– 0.5
0.8
V
2.4
V
0.4
V
μ
A
– 40
40
I
O(L)
– 40
40
μ
A
Parameter
Symbol
Limit Values
Unit
min.
(x64)
max.
(x72)
Input capacitance
(A0 to A10, BS, RAS, CAS, WE)
C
I
1
C
I
2
C
I
3
C
I
4
C
I
O
C
sc
C
sd
45
55
pF
Input capacitance
( CS0 - CS3)
20
25
pF
Input capacitance
(CLK0 - CLK3)
22
38
pF
Input capacitance
(DQMB0 - DQMB7)
13
13
pF
Input / Output capacitance
(DQ0-DQ63,CB0-CB7)
12
12
pF
Input Capacitance (SCL,SA0-2)
Input/Output Capacitance
8
8
10
pF
pF
10
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYS64V2100GCU-10 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module
HYS64V2100GU-10 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module
HYS64V2200GU-10 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
HYS64V2200GU-8 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
HYS64V2200GU-8-3 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module