參數(shù)資料
型號: HYS64D32020GDL-7-B
廠商: INFINEON TECHNOLOGIES AG
英文描述: 200-Pin Small Outline Dual-In-Line Memory Modules
中文描述: 200引腳小外型雙列直插內(nèi)存模塊
文件頁數(shù): 21/31頁
文件大?。?/td> 777K
代理商: HYS64D32020GDL-7-B
Data Sheet
21
V1.2, 2003-08
HYS64D[1600x/32020]GDL–[5/6/7/8]–B
AC Characteristics
DQS falling edge to CK setup time (write
cycle)
DQS falling edge hold time from CK
(write cycle)
Mode register set command cycle time
Write preamble setup time
Write postamble
t
DSS
0.2
0.2
t
CK
2)3)4)5)
t
DSH
0.2
0.2
t
CK
2)3)4)5)
t
MRD
t
WPRES
t
WPST
2
0
0.4
0
0.2
5
1.1
0.60
2
0
0.40
0.60
t
CK
ns
t
CK
2)3)4)5)
2)3)4)5)8)
2)3)4)5)9)
Write preamble
t
WPRE
0.25
t
CK
2)3)4)5)
Address and control input setup time
t
IS
0.9
ns
fast slew rate
3)4)5)6)10)
1.1
1.0
ns
slow slew rate
3)4)5)6)10)
Address and control input hold time
t
IH
1.1
0.9
ns
fast slew rate
3)4)5)6)10)
1.1
1.0
ns
slow slew rate
3)4)5)6)10)
Read preamble
t
RPRE
t
RPRE1.5
0.9
t
RPRES
t
RPST
0.9
1.1
1.1
0.60
0.9
NA
NA
0.40
1.1
t
CK
t
CK
ns
t
CK
CL > 1.5
2)3)4)5)
CL = 1.5
2)3)4)5)11)
2)3)4)5)12)
Read preamble setup time
Read postamble
1.5
0.4
0
50
70
0.60
2)3)4)5)
Active to Precharge command
Active to Active/Auto-refresh command
period
Auto-refresh to Active/Auto-refresh
command period
Active to Read or Write delay
Precharge command period
Active to Autoprecharge delay
Active bank A to Active bank B
command
Write recovery time
Auto precharge write recovery +
precharge time
Internal write to read command delay
t
RAS
t
RC
120E+3
45
65
120E+3 ns
2)3)4)5)
ns
2)3)4)5)
t
RFC
80
75
ns
2)3)4)5)
t
RCD
t
RP
t
RAP
t
RRD
20
20
20
15
20
20
20
15
ns
ns
ns
ns
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
t
WR
t
DAL
15
15
ns
t
CK
2)3)4)5)
(
t
wr
/
t
CK
) + (
t
rp
/
t
CK
)
2)3)4)5)13)
t
WTR
t
WTR1.5
t
XSNR
t
XSRD
t
REFI
1
2
80
200 —
1
75
200
7.8
t
CK
t
CK
ns
t
CK
μ
s
CL > 1.5
2)3)4)5)
CL = 1.5
2)3)4)5)
2)3)4)5)
Exit self-refresh to non-read command
Exit self-refresh to read command
Average Periodic Refresh Interval
2)3)4)5)
7.8
2)3)4)5)14)
Table 12
Parameter
AC Timing - Absolute Specifications –8/–7
(cont’d)
Symbol
–8
–7
Unit Note/
Test Condition
1)
DDR200
Min
.
DDR266A
Min.
Max.
Max.
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