
HYS64(72)V2200/4220GU-8/-10
SDRAM-Modules
Semiconductor Group
7
Standby and Refresh Currents
(T
a
= 0 to 70
o
C, VCC = 3.3V
±
0.3V
)
1)
Parameter
Symbol
Test Condition
X64
X72
Note
max.
Operating Current
Icc1
Burst length = 4, CL=3
trc>=trc(min.),
tck>=tck(min.), Io=0 mA
2 bank interleave operation
800
900
mA
1,2
Precharged Standby
Current in Power
Down Mode
Icc2P
CKE<=VIL(max), tck>=tck(min.)
24
27
mA
Icc2PS
CKE<=VIL(max), tck=infinite
16
18
mA
Precharged Standby
Current in Non-
power
Down Mode
Icc2N
CKE>=VIH(min), tck>=tck (min.),
input changed once in 3 cycles
160
180
mA CS=
High
Icc2NS
CKE>=VIH(min), tck=infinite,
no input change
80
90
mA
Active Standby
Current in Power
Down Mode
Icc3P
CKE<=VIL(max), tck>=tck(min.)
24
27
mA
Icc3PS
CKE<=VIL(max), tck=infinite
16
18
mA
Active Standby
Current in Non-
power Down Mode
Icc3N
CKE>=VIH(min), tck>=tck (min.)
input changed one time
200
225
mA CS=
High
Icc3NS
CKE=>VIH(min),tck=infinite,
no input change
120
135
mA
Burst Operating
Current
Icc4
Burst length = full page,
trc = infinite, CL = 3,
tck>=tck (min.), Io = 0 mA
2 banks activated
760
855
mA
1,2
Auto (CBR) Refresh
Current
Icc5
trc>=trc(min)
720
810
mA
1,2
Self Refresh Current
Icc6
CKE=<0,2V
16
18
mA
1,2