參數(shù)資料
型號： HYS 72V16220GU
廠商： SIEMENS AG
英文描述： 3.3 V 16M × 64-Bit × 2 Bank同步動態(tài)DRAM Module(3.3 V 16M × 64-位 × 2列同步動態(tài)RAM模塊)
中文描述： 3.3伏1,600 × 64位× 2行同步動態(tài)內(nèi)存（3.3伏1,600 × 64 -位× 2列同步動態(tài)內(nèi)存模塊）
文件頁數(shù)： 8/17頁
文件大?。?/td> 115K
代理商： HYS 72V16220GU
HYS 64/72V8300/16220GU
SDRAM-Modules
Data Book
8
12.99
Operating Currents per SDRAM Component
1)
T
A
= 0 to 70
o
C,
V
DD
= 3.3 V
±
0.3 V
(Recommended Operating Conditions unless otherwise noted)
Parameter
Test
Condition
Symbol
-7.5
-8
Unit Note
max.
Operating Current
t
RC
=
t
RCMIN.
,
t
CK
=
t
CKMIN.
Outputs open, Burst Length = 4, CL = 3
All banks operated in random access,
all banks operated in ping-pong manner
to maximize gapless data access
–
I
CC1
120
110
mA
1)
Precharge Standby Current
in Power Down Mode
CS =
V
IH
(min.), CKE
≤
V
IL(MAX)
Precharge Stand-by Current
in Non-Power Down Mode
t
CK
= min.
t
CK
= Infinity
I
CC2P
I
CC2PS
2
2
mA
1)
1.5
1.5
mA
1)
CS =
V
IH (MIN.)
, CKE
≥
V
IH(MIN)
No Operating Current
t
CK
= min.
t
CK
= Infinity
I
CC2N
I
CC2NS
40
35
mA
1)
15
15
mA
1)
t
CK
= min., CS =
V
IH(MIN)
,
active state (max. 4 banks)
CKE
≥
V
IH(MIN.)
I
CC3N
CKE
≤
V
IL(MAX.)
I
CC3P
50
45
mA
1)
8
8
mA
1)
Burst Operating Current
t
CK
= min.,
Read command cycling
–
I
CC4
80
70
mA
1), 2)
Auto-Refresh Current
t
CK
= min.,
Auto-Refresh command cycling
–
I
CC5
140
130
mA
1)
Self-Refresh Current
Self-Refresh Mode, CKE = 0.2 V
–
I
CC6
1
1
mA
1)
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相關代理商/技術參數(shù)
參數(shù)描述
HYS72V16220GU-10 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module
HYS72V16220GU-8 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module
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