參數(shù)資料
型號(hào): HYM75V32M636T6
英文描述: 32Mx64|3.3V|K/H|x4|SDR SDRAM - SO DIMM 256MB
中文描述: 32Mx64 | 3.3 |鉀/ ? | x4 | SDRAM的特別提款權(quán)-蘇256MB的內(nèi)存
文件頁(yè)數(shù): 9/13頁(yè)
文件大小: 234K
代理商: HYM75V32M636T6
PC133 SDRAM SO DIMM
HYM75V32M636(L)T6 Series
Rev. 0.1/Apr. 02 9
DC CHARACTERISTICS I
(TA=0 to 70
°
C
, V
DD
=3.3
±
0.3V)
Note :
1.V
IN
= 0 to 3.6V, All other pins are not tested under V
IN
=0V
2.D
OUT
is disabled, V
OUT
=0 to 3.6
DC CHARACTERISTICS II
Note :
1. I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HYM75V32M636T6 -K/H
4.HYM75V32M636LT6-K/H
Parameter
Symbol
Min.
Max
Unit
Note
Input Leakage Current
I
LI
-4
4
uA
1
Output Leakage Current
I
LO
-1
1
uA
2
Output High Voltage
V
OH
2.4
-
V
I
OH
= -4mA
Output Low Voltage
V
OL
-
0.4
V
I
OL
= +4mA
Parameter
Symbol
Test Condition
Speed
Unit
Note
-K
-H
Operating Current
I
DD1
Burst length=1, One bank active
t
RC
t
RC
(min), I
OL
=0mA
440
440
mA
1
Precharge Standby Current
in Power Down Mode
I
DD2P
CKE
V
IL
(max), t
CK
= min
16
16
mA
I
DD2PS
CKE
V
IL
(max), t
CK
=
16
16
Precharge Standby Current
in Non Power Down Mode
I
DD2N
CKE
V
IH
(min), CS
V
IH
(min), t
CK
= min
Input signals are changed one time during
2clks. All other pins
V
DD
-0.2V or
0.2V
160
160
mA
I
DD2NS
CKE
V
IH
(min), t
CK
=
Input signals are stable.
80
80
Active Standby Current
in Power Down Mode
I
DD3P
CKE
V
IL
(max), t
CK
= min
56
56
mA
I
DD3PS
CKE
V
IL
(max), t
CK
=
56
56
Active Standby Current
in Non Power Down Mode
I
DD3N
CKE
V
IH
(min), CS
V
IH
(min), t
CK
= min
Input signals are changed one time during
2clks. All other pins
V
DD
-0.2V or
0.2V
320
320
mA
I
DD3NS
CKE
V
IH
(min), t
CK
=
Input signals are stable.
320
320
Burst Mode Operating
Current
I
DD4
t
CK
t
CK
(min), I
OL
=0mA
All banks active
CL=3
800
800
mA
1
CL=2
720
720
Auto Refresh Current
I
DD5
t
RRC
t
RRC
(min), All banks active
1760
1760
mA
2
Self Refresh Current
I
DD6
CKE
0.2V
24
24
mA
3
12
12
mA
4
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