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參數(shù)資料
| 型號(hào)： | HYM72V16M656BT6-P |
| 英文描述： | SDRAM|16MX64|CMOS|DIMM|144PIN|PLASTIC |
| 中文描述： | 內(nèi)存| 16MX64 |的CMOS |內(nèi)存| 144Pin支持|塑料 |
| 文件頁(yè)數(shù)： | 10/15頁(yè) |
| 文件大小： | 215K |
| 代理商： | HYM72V16M656BT6-P |
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PC133 SDRAM Registered DIMM
Rev. 0.4/Dec. 2002
11
HYM72V12C736B(L)S4 Series
DC CHARACTERISTICS I
(TA=0 to 70
°
C
, V
DD
=3.3
±
0.3V)
Note :
1.V
IN
= 0 to 3.6V, All other pins are not tested under V
IN
=0V
2.D
OUT
is disabled, V
OUT
=0 to 3.6
DC CHARACTERISTICS II
Note :
1. I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3. HYM72V12C736BS4 - K/H
4. HYM72V12C736BLS4 - K/H
Parameter
Symbol
Min.
Max
Unit
Note
Input Leakage Current
I
LI
-10
10
uA
1
Output Leakage Current
I
LO
-1
1
uA
2
Output High Voltage
V
OH
2.4
-
V
I
OH
= -4mA
Output Low Voltage
V
OL
-
0.4
V
I
OL
= +4mA
Parameter
Symbol
Test Condition
Speed
Unit
Note
-K
-H
Operating Current
I
DD1
Burst length=1, One bank active
t
RC
≥
t
RC
(min), I
OL
=0mA
2760
mA
1
Precharge Standby Current
in Power Down Mode
I
DD2P
CKE
≤
V
IL
(max), t
CK
= min
420
mA
I
DD2PS
CKE
≤
V
IL
(max), t
CK
=
∞
76
Precharge Standby Current
in Non Power Down Mode
I
DD2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= min
Input signals are changed one time during
2clks. All other pins
≥
V
DD
-0.2V or
≤
0.2V
1100
mA
I
DD2NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
360
Active Standby Current
in Power Down Mode
I
DD3P
CKE
≤
V
IL
(max), t
CK
= min
282
mA
I
DD3PS
CKE
≤
V
IL
(max), t
CK
=
∞
108
Active Standby Current
in Non Power Down Mode
I
DD3N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= min
Input signals are changed one time during
2clks. All other pins
≥
V
DD
-0.2V or
≤
0.2V
1020
mA
I
DD3NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
450
mA
Burst Mode Operating
Current
I
DD4
t
CK
≥
t
CK
(min), I
OL
=0mA
All banks active
3500
mA
1
Auto Refresh Current
I
DD5
t
RRC
≥
t
RRC
(min), All banks active
4800
mA
2
Self Refresh Current
I
DD6
CKE
≤
0.2V
Normal
550
mA
3
Low power
156
mA
4
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|---|---|
| HYM72V16M656BT6-S | SDRAM|16MX64|CMOS|DIMM|144PIN|PLASTIC |
| HYM72V16M656BTU6 | 16Mx64|3.3V|8/P/S|x4|SDR SDRAM - SO DIMM 128MB |
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| HYM72V16M656HT6 | 16Mx64|3.3V|P/S|x4|SDR SDRAM - SO DIMM 128MB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM72V16M656BT6-S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|16MX64|CMOS|DIMM|144PIN|PLASTIC |
| HYM72V16M656BTU6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx64|3.3V|8/P/S|x4|SDR SDRAM - SO DIMM 128MB |
| HYM72V16M656HLT6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx64|3.3V|P/S|x4|SDR SDRAM - SO DIMM 128MB |
| HYM72V16M656HT6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx64|3.3V|P/S|x4|SDR SDRAM - SO DIMM 128MB |
| HYM72V16M656LT6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx64|3.3V|P/S|x4|SDR SDRAM - SO DIMM 128MB |
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