參數(shù)資料
型號: HYM71V8M655HCT6
英文描述: 8Mx64|3.3V|8/P/S|x4|SDR SDRAM - SO DIMM 64MB
中文描述: 8Mx64 | 3.3 | 8/P/S | x4 | SDRAM的特別提款權(quán)-蘇64MB的內(nèi)存
文件頁數(shù): 11/14頁
文件大?。?/td> 355K
代理商: HYM71V8M655HCT6
PC133 SDRAM Unbuffered DIMM
Rev. 0.1/Nov. 01
12
HYM71V32635BT8 Series
AC CHARACTERISTICS II
Note :
1. A new command can be given tRRC after self refresh exit
Parameter
Symbol
-K
-H
Unit
Note
Min
Max
Min
Max
RAS Cycle Time
Operation
tRC
60
-
65
-
ns
Auto Refresh
tRRC
60
-
65
-
ns
RAS to CAS Delay
tRCD
15
-
20
-
ns
RAS Active Time
tRAS
45
100K
45
100K
ns
RAS Precharge Time
tRP
15
-
20
-
ns
RAS to RAS Bank Active Delay
tRRD
15
-
15
-
ns
CAS to CAS Delay
tCCD
1
-
1
-
CLK
Write Command to Data-In Delay
tWTL
0
-
0
-
CLK
Data-In to Precharge Command
tDPL
2
-
2
-
CLK
Data-In to Active Command
tDAL
4
-
5
-
CLK
DQM to Data-Out Hi-Z
tDQZ
2
-
2
-
CLK
DQM to Data-In Mask
tDQM
0
-
0
-
CLK
MRS to New Command
tMRD
2
-
2
-
CLK
Precharge to Data
Output Hi-Z
CAS Latency = 3
tPROZ3
3
-
3
-
CLK
CAS Latency = 2
tPROZ2
2
-
2
-
CLK
Power Down Exit Time
tPDE
1
-
1
-
CLK
Self Refresh Exit Time
tSRE
1
-
1
-
CLK
1
Refresh Time
tREF
-
64
-
64
ms
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